J201TA

更新时间： 2024-01-10 13:32:37

品牌	Logo	应用领域
CALOGIC		晶体放大器小信号场效应晶体管
页数	文件大小	规格书
1页	24K
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中文翻译

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数据手册

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J201TA 数据手册

N-Channel JFET

General Purpose Amplifier

CORPORATION

J201 – J204 / SST201 – SST204

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

High Input Impedance

Low I_GSS

•

Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature Range . . . . . . . . . . . . . -55^oC to +150^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +135^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/^oC

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

•

PIN CONFIGURATION

SOT-23

TO-92

ORDERING INFORMATION

PRODUCT MARKING (SOT-23)

Part

Package

Temperature Range

SST201

SST202

SST203

SST204

A01

A02

A03

A04

-55^oC to +135^oC

J201-204

SST201-204 Plastic SOT-23

For Sorted Chips in Carriers see 2N4338 series.

Plastic TO-92

-55^oC to +135^oC

5010

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

201

202

203

204

SYMBOL

PARAMETER

UNITS TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Gate Reverse Current

(Note 1)

I_GSS

-100

-2.0

_DS= 0, V_GS= -20V

Gate-Source Cutoff

Voltage

V_GS(off)

BV_GSS

I_DSS

I_G

-0.3

-40

0.2

-1.5 -0.8

-40

-4.0 -2.0

-40

-10.0 -0.3

-25

VDS = 20V, I_D= 10nA

Gate-Source Breakdown

Voltage

V_DS= 0, I_G= -1µA

Saturation Drain Current

(Note 2)

1.0 0.9

4.5 4.0

0.2 1.2 3.0

-10

_DS= 20V, V_GS= 0

Gate Current (Note 1)

-10

V_DG= 20V, I_D= I_DSS(min)

Common-Source Forward

Transconductance (Note 2)

g_fs

500

1,000

1,500

500 1,500

µs

f = 1kHz

Common-Source Output

Conductance

g_os

C_iss

C_rss

e_n

3.5

2.5

_DS= 20V,

_GS= 0

Common-Source Input

Capacitance

f = 1MHz

(Note 3)

Common-Source Reverse

Transfer Capacitance

√Hz

Equivalent Short-Circuit

Input Noise Voltage

V_DS= 10V, f = 1kHz

_GS= 0 (Note 3)

NOTES: 1. Approximately doubles for every 10^oC increase in T_A.

2. Pulse test duration = 2ms.

3. For design reference only, not 100% tested.

中文翻译

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与J201TA相关器件

型号	品牌	获取价格	描述	数据表
J201-TA	VISHAY	获取价格	暂无描述
J201-TA13	VISHAY	获取价格	Transistor
J201-TA13-E3	VISHAY	获取价格	Transistor
J201-TA-E3	VISHAY	获取价格	Transistor
J201TR1	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
J201-TR1	VISHAY	获取价格	Transistor
J201-TR1-E3	VISHAY	获取价格	Transistor
J201TR2	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
J201TR3	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
J201TR4	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

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