Datasheet > ITC117P

ITC117P

更新时间： 2023-12-06 20:13:18

品牌	Logo	应用领域
力特 - LITTELFUSE		继电器固态继电器晶体管达林顿晶体管光电二极管齐纳二极管
页数	文件大小	规格书
8页	347K
描述
OptoMOS?多功能产品系列将多个光隔离分立组件功能集成到一个封装中。这些产品将固态继电器、光电耦合器、桥式整流器、达林顿晶体管和齐纳二极管混合并匹配在一起，在一个单个的小巧封装中打造高度功能

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ITC117P 数据手册

OBSOLETE

ITC117P

INTEGRATED

CIRCUITS

DIVISION

PHOTOTRANSISTOR PERFORMANCE DATA*

Single Transistor Normalized CTR

Typical Transfer Characteristics of

Single Transistor Detector

vs. Forward Current

(V_CE=0.5V)

vs. Temperature

(V_CE=0.5V)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I_F=10mA

I_F=5mA

I =1mA

I^F=2mA

I^F=5mA

I^F=10mA

I^F=15mA

I_F

I_F=2mA

I_F=1mA

^F=20mA

10 12 14 16 18 20

-40 -20

80 100 120

Forward Current (mA)

Collector Emitter Voltage

Temperature (C)

Single Transistor

Collector Current vs. Forward Current

(V_CE=0.5V)

10 12 14 16 18 20

Forward Current (mA)

DARLINGTON PERFORMANCE DATA*

Darlington Transistor

Collector Current vs. Forward Current

(V_CE=0.5V)

Darlington Transistor Normalized CTR

Typical Normalized CTR

vs.Temperature

(V_CE=0.8V)

vs. Forward Current

(V_CE=0.8V)

2.5

3.0

2.5

2.0

1.5

1.0

0.5

I_F=1mA

I_F=2mA

I_F=5mA

I_F=10mA

I_F=15mA

I_F=20mA

2.0

1.5

1.0

0.5

10 12 14 16 18 20

-40

-20

100

Forward Current (mA)

Temperature (ºC)

Typical Transfer Characteristics of

Darlington Transistor

V-I Characteristics for Test Circuit

120

100

I_b=10A

I_b=8A

I_b=6A

I_b=4A

I_b=2A

100

120

Collector Emitter Voltage

I_OUT(mA)

* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.

ROBS

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