Datasheet > ISO5852SDW

ISO5852SDW

更新时间： 2024-02-27 12:15:51

品牌	Logo	应用领域
德州仪器 - TI		栅驱动双极性晶体管光电二极管接口集成电路驱动器
页数	文件大小	规格书
37页	1476K
描述
High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

ISO5852SDW 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	SOP,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	12 weeks	风险等级：	1
Samacsys Description：	5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver	其他特性：	ALSO REQUIRED VEE2 SUPPLY -15V TO 0V
高边驱动器：	NO	接口集成电路类型：	AND GATE BASED IGBT/MOSFET DRIVER
JESD-30 代码：	R-PDSO-G16	JESD-609代码：	e4
长度：	10.3 mm	湿度敏感等级：	2
功能数量：	1	端子数量：	16
最高工作温度：	125 °C	最低工作温度：	-40 °C
最大输出电流：	5 A	输出极性：	TRUE
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
座面最大高度：	2.65 mm	最大压摆率：	4.5 mA
最大供电电压：	5.5 V	最小供电电压：	2.25 V
标称供电电压：	5 V	电源电压1-最大：	30 V
电源电压1-分钟：	15 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	断开时间：	0.11 µs
接通时间：	0.11 µs	宽度：	7.5 mm

ISO5852SDW 数据手册

Sample &

Buy

Support &

Community

Product

Folder

Tools &

Software

Technical

Documents

ISO5852S

SLLSEQ0A –AUGUST 2015–REVISED SEPTEMBER 2015

ISO5852S High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

with Split Outputs and Active Safety Features

1 Features

3 Description

The ISO5852S is a 5.7-kV_RMS, reinforced isolated

gate driver for IGBTs and MOSFETs with split

outputs, OUTH and OUTL, providing 2.5-A source

and 5-A sink current. The input side operates from a

single 2.25-V to 5.5-V supply. The output side allows

for a supply range from minimum 15-V to maximum

30-V. Two complementary CMOS inputs control the

output state of the gate driver. The short propagation

time of 76 ns assures accurate control of the output

stage.

•

100-kV/μs Minimum Common-Mode Transient

Immunity (CMTI) at V_CM= 1500 V

•

Split Outputs to Provide 2.5-A Peak Source and

5-A Peak Sink Currents

Short Propagation Delay: 76 ns (Typ),

110 ns (Max)

•

2-A Active Miller Clamp

Output Short-Circuit Clamp

Soft Turn-Off (STO) during Short Circuit

An internal desaturation (DESAT) fault detection

recognizes when the IGBT is in an overcurrent

condition. Upon a DESAT detect, a Mute logic

immediately blocks the output of the isolator and

initiates a soft-turn-off procedure which disables,

OUTH, and pulls OUTL to low over a time span of

2 μs. When OUTL reaches 2 V with respect to the

most negative supply potential, V_EE2, the gate driver

output is pulled hard to V_EE2potential turning the

IGBT immediately off.

Fault Alarm upon Desaturation Detection is

Signaled on FLT and Reset Through RST

•

Input and Output Under Voltage Lock-Out (UVLO)

with Ready (RDY) Pin Indication

Active Output Pull-down and Default Low Outputs

with Low Supply or Floating Inputs

•

2.25-V to 5.5-V Input Supply Voltage

15-V to 30-V Output Driver Supply Voltage

CMOS Compatible Inputs

When desaturation is active, a fault signal is sent

across the isolation barrier pulling the FLT output at

the input side low and blocking the isolator input.

Mute logic is activated through the soft-turn-off

period. The FLT output condition is latched and can

be reset only after RDY goes high, through a low-

active pulse at the RST input.

Rejects Input Pulses and Noise Transients

Shorter Than 20 ns

•

Operating Temperature: –40°C to 125°C Ambient

Surge Immunity 12800-V_PK(according to IEC

61000-4-5)

•

Safety and Regulatory Certifications:

Device Information⁽¹⁾

–

8000-V_PKV_IOTMand 2121-V_PKV_IORM

Reinforced Isolation per DIN V VDE V 0884-10

(VDE V 0884-10):2006-12

PART NUMBER

PACKAGE

BODY SIZE (NOM)

ISO5852S

SOIC (16)

10.30 mm × 7.50 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

–

5700-V_RMSIsolation for 1 Minute per UL 1577

CSA Component Acceptance Notice 5A, IEC

60950-1, IEC 60601-1 and IEC 61010-1 End

Equipment Standards

Functional Block Diagram

–

CQC Certification per GB4943.1-2011

All Certifications are Planned

2 Applications

•

Isolated IGBT and MOSFET Drives in

–

Industrial Motor Control Drives

Industrial Power Supplies

Solar Inverters

HEV and EV Power Modules

Induction Heating

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...37

中文翻译

下载PDF

ISO5852SDW 替代型号

型号	品牌	替代类型	描述	数据表
ISO5852SDWR	TI	类似代替	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safe

与ISO5852SDW相关器件

型号	品牌	获取价格	描述	数据表
ISO5852SDWR	TI	获取价格	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safe
ISO5852S-EP	TI	获取价格	具有分离输出和有源保护功能的 5.7kVrms、2.5A/5A 增强型单通道隔离式栅极驱动
ISO5852SMDWREP	TI	获取价格	具有分离输出和有源保护功能的 5.7kVrms、2.5A/5A 增强型单通道隔离式栅极驱动
ISO5852S-Q1	TI	获取价格	具有分离输出和有源保护功能的汽车类 5.7kVrms、2.5A/5A 单通道隔离式栅极驱动
ISO5852SQDWQ1	TI	获取价格	具有分离输出和有源保护功能的汽车类 5.7kVrms、2.5A/5A 单通道隔离式栅极驱动
ISO5852SQDWRQ1	TI	获取价格	具有分离输出和有源保护功能的汽车类 5.7kVrms、2.5A/5A 单通道隔离式栅极驱动
ISO6521	TI	获取价格	功能隔离双通道 1/1 数字隔离器
ISO6521REUR	TI	获取价格	功能隔离双通道 1/1 数字隔离器 \| REU \| 8 \| -40 to 1
ISO6720	TI	获取价格	ISO672x-Q1 General Purpose Reinforced and Basic Dual-Channel Automotive Digital Isolators
ISO6720_V01	TI	获取价格	ISO672x General Purpose Basic Dual-Channel Digital Isolators with Robust EMC

与ISO5852SDW相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

16
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

15
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

13
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

ISO5852SDW

ISO5852SDW 技术参数

ISO5852SDW 数据手册

ISO5852SDW 替代型号

与ISO5852SDW相关器件

与ISO5852SDW相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ISO5852SDW

ISO5852SDW 技术参数

ISO5852SDW 数据手册

ISO5852SDW 替代型号

与ISO5852SDW相关器件

与ISO5852SDW相关文章

您还可以找

您在本页遇到什么问题？