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ISL71091SEHX20SAMPLE PDF预览

ISL71091SEHX20SAMPLE

更新时间: 2024-02-02 18:40:41
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
16页 1269K
描述
THREE TERM VOLTAGE REFERENCE

ISL71091SEHX20SAMPLE 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:DIE,Reach Compliance Code:compliant
风险等级:5.68模拟集成电路 - 其他类型:THREE TERMINAL VOLTAGE REFERENCE
JESD-30 代码:R-XUUC-N10JESD-609代码:e4
功能数量:1输出次数:1
端子数量:10最高工作温度:125 °C
最低工作温度:-55 °C最大输出电压:2.05312 V
最小输出电压:2.04288 V标称输出电压:2.048 V
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED最大供电电压 (Vsup):30 V
最小供电电压 (Vsup):4.2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
最大电压温度系数:6 ppm/ °C温度等级:MILITARY
端子面层:Gold (Au)端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
总剂量:100k Rad(Si) V微调/可调输出:YES
Base Number Matches:1

ISL71091SEHX20SAMPLE 数据手册

 浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第3页浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第4页浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第5页浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第7页浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第8页浏览型号ISL71091SEHX20SAMPLE的Datasheet PDF文件第9页 
ISL71091SEH20  
Electrical Specifications for Die VIN = 5V, IOUT = 0, CL = 1µF and CCOMP = 0.001µF unless otherwise specified. Boldface limits apply  
after radiation at +25°C and across the operating temperature range, -55°C to +125°C without radiation, unless otherwise specified. Specifications over  
temperature are guaranteed but not production tested on die.  
MIN  
MAX  
PARAMETER  
VOUT  
DESCRIPTION  
Output Voltage  
VOUT Accuracy at TA = +25°C  
CONDITIONS  
(Note 6)  
TYP  
(Note 6)  
UNIT  
V
2.048  
VOA  
VOUT = 2.048V (Note 10)  
-0.05  
-0.15  
-0.25  
+0.05  
+0.15  
+0.25  
%
V
OUT Accuracy at TA = -55°C to +125°C VOUT = 2.048V (Note 10)  
OUT Accuracy at TA = +25°C, Post VOUT = 2.048V (Note 10)  
%
V
%
Radiation  
TC VOUT  
Output Voltage Temperature  
Coefficient (Note 7)  
6
ppm/°C  
VIN  
Input Voltage Range  
Supply Current  
VOUT = 2.048V  
4.2  
30.0  
0.5  
5
V
IIN  
0.3  
0.3  
11  
mA  
VOUT /VIN  
VOUT/IOUT  
Line Regulation  
Load Regulation  
VIN = 4.2V to 30V  
ppm/V  
ppm/mA  
ppm/mA  
V
Sourcing: 0mA IOUT 10mA  
Sinking: -5mA IOUT 0mA  
IOUT = 10mA  
40  
25  
80  
VD  
Dropout Voltage (Note 8)  
2.0  
2.5  
NOTES:  
6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.  
7. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the  
temperature range; in this case, -55°C to +125°C = +180°C.  
8. Dropout Voltage is the minimum VIN - VOUT differential voltage measured at the point where VOUT drops 1mV from VIN = nominal at TA = +25°C.  
9. Post-reflow drift for the ISL71091SEH20 devices can exceed 100µV based on experimental results with devices on FR4 double-sided boards. The  
engineer must take this into account when considering the reference voltage after assembly.  
10. The VOUT accuracy is based on die mount with Silver Glass die attach material such as “QMI 2569” or equivalent in a package with an Alumina  
ceramic substrate.  
FN8632.2  
March 17, 2016  
Submit Document Feedback  
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