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ISL6146AFUZ PDF预览

ISL6146AFUZ

更新时间： 2024-02-25 19:57:41
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
28页 1780K
描述
Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

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ISL6146AFUZ 技术参数

生命周期：Unknown零件包装代码：DFN, MSOP
包装说明：TSSOP,针数：8, 8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.51
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：S-PDSO-G8JESD-609代码：e3
长度：3 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：SQUARE封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260座面最大高度：1.1 mm
最大供电电压：20 V最小供电电压：3 V
标称供电电压：12 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn) - annealed
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：3 mmBase Number Matches：1

ISL6146AFUZ 数据手册

 浏览型号ISL6146AFUZ的Datasheet PDF文件第2页浏览型号ISL6146AFUZ的Datasheet PDF文件第3页浏览型号ISL6146AFUZ的Datasheet PDF文件第4页浏览型号ISL6146AFUZ的Datasheet PDF文件第5页浏览型号ISL6146AFUZ的Datasheet PDF文件第6页浏览型号ISL6146AFUZ的Datasheet PDF文件第7页 
DATASHEET  
ISL6146  
Low Voltage OR-ing FET Controller  
FN7667  
Rev 5.00  
Aug 17, 2015  
The ISL6146 represents a family of OR-ing MOSFET controllers  
capable of OR-ing voltages from 1V to 18V. Together with suitably  
sized N-channel power MOSFETs, the ISL6146 increases power  
distribution efficiency when replacing a power OR-ing diode in high  
current applications. It provides gate drive voltage for the  
MOSFET(s) with a fully integrated charge pump.  
Features  
• OR-ing down to 1V and up to 20V with ISL6146A, ISL6146B,  
ISL6146D and ISL6146E  
• Programmable voltage compliant operation with ISL6146C  
• V hot swap transient protection rating to +24V  
IN  
The ISL6146 allows users to adjust with external resistor(s) the  
• High speed comparator provides fast <0.3µs turn-off in  
response to shorts on sourcing supply  
V
- V trip point, which adjusts the control sensitivity to system  
OUT IN  
power supply noise. An open drain FAULT pin will indicate if a  
conditional or FET fault has occurred.  
• Fastest reverse current fault isolation with 6A turn-off  
current  
The ISL6146A and ISL6146B are optimized for very low voltage  
operation, down to 1V with an additional independent bias of 3V  
or greater.  
• Very smooth switching transition  
• Internal charge pump to drive N-channel MOSFET  
The ISL6146C provides a voltage compliant mode of operation  
down to 3V with programmable undervoltage lock out and  
overvoltage protection threshold levels.  
• User programmable V - V  
IN OUT  
Vth for noise immunity  
• Open-drain FAULT output with delay  
The ISL6146D and ISL6146E are like the ISL6146A and ISL6146B  
respectively, but do not have conduction state reporting via the  
fault output.  
- Short between any two of the OR-ing FET terminals  
- GATE voltage and excessive FET V  
- Power-good indicator (ISL6146C)  
DS  
TABLE 1. KEY DIFFERENCES BETWEEN PARTS IN FAMILY  
PART  
• MSOP and DFN package options  
NUMBER  
ISL6146A  
ISL6146B  
ISL6146C  
ISL6146D  
ISL6146E  
KEY DIFFERENCES  
Applications  
Separate BIAS and V with Active High Enable  
IN  
• N+1 industrial and telecom power distribution systems  
• Uninterruptable power supplies  
Separate BIAS and V with Active Low Enable  
IN  
• Low voltage processor and memory  
• Storage and datacom systems  
V
with OVP/UVLO Inputs  
IN  
ISL6146A without Conduction Monitor and Reporting  
ISL6146B without Conduction Monitor and Reporting  
+
C
O
M
M
O
N
Q1  
+
VIN GATE VOUT  
BIAS  
ISL6146B  
P
O
W
E
GATE FAST OFF, ~200ns FALL TIME  
~70ns FROM 20V TO 12.6V ACROSS 57nF  
GATE OUTPUT SINKING ~ 6A  
VOLTAGE  
DC/DC  
(3V - 20V)  
ADJ  
FLT  
EN  
R
B
U
S
GND  
Q2  
-
C
O
M
M
O
N
+
+
VIN GATE VOUT  
P
O
W
E
VOLTAGE  
DC/DC  
(3V - 20V)  
BIAS  
ADJ  
ISL6146B  
FLT  
EN  
R
B
U
S
GND  
-
FIGURE 1. TYPICAL APPLICATION  
FIGURE 2. ISL6146 GATE HIGH CURRENT PULL-DOWN  
FN7667 Rev 5.00  
Aug 17, 2015  
Page 1 of 28  
1234567...28

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