Datasheet > ISB35389

ISB35389

更新时间： 2024-02-08 08:04:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	347K
描述
HCMOS STRUCTURED ARRAY

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中文翻译

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数据手册

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ISB35389 数据手册

ISB35000 SERIES

HCMOS STRUCTURED ARRAY

PRELIMINARY DATA

FEATURES

Fully independent power and ground

configurations for inputs, core and outputs.

0.5 micron triple layer metal HCMOS process

featuring retrograde well technology, low

resistance salicided active areas, polysilicide

gates and thin metal oxide.

Programmable I/O ring capability up to 1000

pads.

Output buffers capable of driving ISA, EISA,

PCI, MCA, and SCSI interface levels.

3.3 V optimized transistor with 5 V I/O interface

capability

Active pull up and pull down devices.

Buskeeper I/O functions.

2 - input NAND delay of 0.210 ns (typ) with

fanout = 2.

Oscillators for wide frequency spectrum.

Broad range of 400 SSI cells.

Broad I/O functionality including LVCMOS,

LVTTL, GTL, PECL, and LVDS.

300 element macrofunction library.

Design For Test includes LSSD macro library

option and IEEE 1149.1 JTAG Boundary Scan

architecture built in.

High drive I/O; capability of sinking up to 48 mA

with slew rate control, current spike suppression

and impedance matching.

Cadence and Mentor based design system with

interfaces from multiple workstations.

Metallised generators to support SPRAM and

DPRAM, plus an extensive embedded function

library.

Broad ceramic and plastic package range.

Combines Standard Cell Features with Sea of

Gates time to market.

Latchup trigger current +/- 500 mA.

ESD protection +/- 4000 volts.

Table 1. Product range

Internal

Device Name

Estimated ²

Gates

Total Usable³

Gates

Maximum⁴

Device Pads

Maximum⁵

I/O

Total Sites¹

ISB35083

ISB35130

ISB35166

ISB35208

ISB35279

ISB35389

ISB35484

ISB35666

ISB35832

124,416

194,400

249,696

311,904

418,176

584,064

726,624

998,784

1,247,616

82,944

129,600

166,464

207,936

278,784

389,376

484,416

665,856

831,744

58,060

90,720

188

232

260

288

332

388

432

504

560

172

216

244

272

316

372

416

488

544

116,524

145,555

195,148

253,094

314,870

399,513

499,046

Notes : 1. Internal sites is based on the number of placement sites available to the route and place software

2. A factor of 1.5 is used to derive the gate complexity from the total available sites. This number is in Nand2 equivalents

3. Factors of 70%, 65%, and 60% have been used to calculate the routing efficiency. This number may vary depending on the

design.

4. 16 corner pads are dedicated to internal and external power supplies. I/O pads may be configured for additional power.

5. Maximum I/O = total device pads minus power pads.

May 1994

1/15

12 3 4 5 6 7...15

中文翻译

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与ISB35389相关器件

型号	品牌	获取价格	描述	数据表
ISB35484	STMICROELECTRONICS	获取价格	HCMOS STRUCTURED ARRAY
ISB35666	STMICROELECTRONICS	获取价格	HCMOS STRUCTURED ARRAY
ISB35832	STMICROELECTRONICS	获取价格	HCMOS STRUCTURED ARRAY
ISB35G	ISOCOM	获取价格	Transistor Output SSR, 1-Channel, 3750V Isolation, DIP-6
ISB35-G	ISOCOM	获取价格	Solid State Relay, TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX, DIP-6
ISB35SM	ISOCOM	获取价格	Transistor Output SSR, 1-Channel, 3750V Isolation, SURFACE MOUNT PACKAGE-6
ISB35-SM	ISOCOM	获取价格	Solid State Relay, TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX, SURFACE MOUN
ISB35-SMT&R	ISOCOM	获取价格	Solid State Relay, TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX, SURFACE MOUN
ISB40	ISOCOM	获取价格	Telecommunications
ISB40G	ISOCOM	获取价格	Transistor Output SSR, 1-Channel, 3750V Isolation, DIP-6

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