Datasheet > IS41C44004

IS41C44004

更新时间： 2022-11-24 21:52:37

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
20页	235K
描述
4Mx4 bit Dynamic RAM with EDO Page Mode

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数据手册

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IS41C44004 数据手册

IC41C4400x and IC41LV4400x Series

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol Parameters

Rating

Unit

V^T

Voltage on Any Pin Relative to GND

3.3V

−1.0 to +7.0

−0.5 to +4.6

V^CC

Supply Voltage

3.3V

−1.0 to +7.0

−0.5 to +4.6

IOUT

Output Current

Power Dissipation

Commercial Operation Temperature

Industrial Operation Temperature

0 to +70

−40 to +85

−55 to +125

^oC

TSTG

Storage Temperature

^oC

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC

Supply Voltage

3.3V

4.5

3.0

5.0

3.3

5.5

3.6

V^IH

VIL

Input High Voltage

Input Low Voltage

3.3V

2.4

2.0

−

VCC + 1.0

VCC + 0.3

3.3V

−1.0

−0.3

0.8

Commercial Ambient Temperature

Industrial Ambient Temperature

^oC

−40

CAPACITANCE^(1,2)

Symbol

Parameter

Max.

Unit

CIN1

CIN2

CIO

Input Capacitance: A0-A10(A11)

Input Capacitance: RAS, CAS, WE, OE

Data Input/Output Capacitance: I/O0-I/O3

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25^oC, f = 1 MHz.

Integrated Circuit Solution Inc.

DR007-0B 10/17/2002

1 2 3 456 7 8...20

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