DATASHEET
Radiation Hardened High Frequency Half Bridge
Drivers
IS-2100ARH, IS-2100AEH
Features
The radiation hardened IS-2100ARH, IS-2100AEH are high
frequency, 130V half bridge N-Channel MOSFET driver ICs,
which are functionally similar to industry standard 2110 types.
The low-side and high-side gate drivers are independently
controlled. This gives the user maximum flexibility in dead
time selection and driver protocol.
• Electrically screened to DLA SMD # 5962-99536
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
- Maximum total dose . . . . . . . . . . . . . . . . . . . . . 300krad(Si)
- DI RSG process provides latch-up immunity
2
- SEU rating . . . . . . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm
In addition, the devices have on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a set
or reset pulse is generated to correct the high-side latch. This
feature protects the high-side latch from single event upsets
(SEUs).
- Vertical device architecture reduces sensitivity to low dose
rates
• Bootstrap supply maximum voltage to 150V
• Drives 1000pF load at 1MHz with rise and fall times of 30ns
(typical)
Applications
• High frequency switch-mode power supplies
• Drivers for inductive loads
• DC motor drivers
• 1.5A (typical) peak output current
• Independent inputs for non-half bridge topologies
• Low DC power consumption . . . . . . . . . . . . . . 60mW (typical)
• Operates with V = V over 12V to 20V range
DD CC
• Low-side supply undervoltage protection
Pin Configuration
IS-2100ARH, IS-2100AEH
FLATPACK (CDFP4-F16)
TOP VIEW
LO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
COM
V
SS
V
LIN
SD
CC
NC
NC
VS
VB
HO
HIN
V
DD
NC
NC
May 10, 2016
FN9037.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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