Datasheet > IRS23365DMTRPBF

IRS23365DMTRPBF

更新时间： 2024-01-11 09:18:44

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
37页	594K
描述
Drives up to six IGBT/MOSFET power devices

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IRS23365DMTRPBF 数据手册

IRS23365DM

Product Summary

Topology

Features

•

Drives up to six IGBT/MOSFET power devices

3 Phase

≤ 600 V

Gate drive supplies up to 20 V per channel

Integrated bootstrap functionality

Overꢀcurrent protection

Overꢀtemperature shutdown input

Advanced input filter

Integrated deadtime protection

Shootꢀthrough (crossꢀconduction) protection

Undervoltage lockout for V_CC& V_BS

Enable/disable input and fault reporting

Adjustable fault clear timing

V_OFFSET

V_OUT

10 V – 20 V

180 mA & 380 mA

530 ns & 530 ns

275 ns

I_o+& I _oꢀ(typical)

t_ON& t_OFF(typical)

Deadtime (typical)

Package Options

Separate logic and power grounds

3.3 V input logic compatible

Tolerant to negative transient voltage

Designed for use with bootstrap power supplies

Matched propagation delays for all channels

ꢀ40°C to 125°C operating range

RoHS compliant

LeadꢀFree

48ꢀLead MLPQ7X7

(without 14 leads)

Typical Applications

•

Appliance motor drives

Servo drives

Micro inverter drives

General purpose three phase inverters

Typical Connection Diagram

www.irf.com

3 December, 2012

12 3 4 5 6 7...37

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