Datasheet > IRLI2505

IRLI2505

更新时间： 2024-09-29 03:36:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	106K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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IRLI2505 数据手册

PD - 9.1327A

IRLI2505

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Ultra Low On-Resistance

l Isolated Package

V_DSS= 55V

R_DS(on)= 0.008Ω

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

I_D= 58A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowestpossibleon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

360

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.42

±16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

500

E_AR

dv/dt

T_J

Repetitive Avalanche Current

Peak Diode Recovery dv/dt

Operating Junction and

6.3

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Min.

––––

Typ.

––––

Max.

2.4

Units

R_θJC

R_θJA

°C/W

8/25/97

12 3 4 5 6 7 8

中文翻译

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与IRLI2505相关器件

型号	品牌	获取价格	描述	数据表
IRLI2505-002	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLI2505-002PBF	INFINEON	获取价格	58A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI2505-003	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLI2505-003PBF	INFINEON	获取价格	58A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI2505-004	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLI2505-005PBF	INFINEON	获取价格	58A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI2505-006	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLI2505-006PBF	INFINEON	获取价格	58A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI2505-009	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IRLI2505-011PBF	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met

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