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IRKTF112-04HL PDF预览

IRKTF112-04HL

更新时间: 2024-09-30 20:25:55
品牌 Logo 应用领域
威世 - VISHAY 局域网栅极
页数 文件大小 规格书
1页 29K
描述
Silicon Controlled Rectifier, 250 A, 400 V, SCR, POWER, INT-A-PAK-7

IRKTF112-04HL 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D3
针数:7Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.71
Is Samacsys:N其他特性:UL APPROVED
外壳连接:ISOLATED配置:SERIES CONNECTED, 2 ELEMENTS
最大直流栅极触发电流:200 mAJESD-30 代码:R-PUFM-D3
元件数量:2端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:250 A断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

IRKTF112-04HL 数据手册

  

与IRKTF112-04HL相关器件

型号 品牌 获取价格 描述 数据表
IRKTF112-04HLN INFINEON

获取价格

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112-04HM INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 112000mA I(T), 400V V(DRM), 400V V(RRM), 2
IRKTF112-04HMN INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 400V V(DRM), 400V V(RRM), 2 Element
IRKTF112-04HN INFINEON

获取价格

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112-04HN VISHAY

获取价格

Silicon Controlled Rectifier, 250 A, 400 V, SCR, POWER, INT-A-PAK-7
IRKTF112-04HNN INFINEON

获取价格

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112-04HP INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 112000mA I(T), 400V V(DRM), 400V V(RRM), 2
IRKTF112-04HPN INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 400V V(DRM), 400V V(RRM), 2 Element
IRKTF112-06CK INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 112000mA I(T), 600V V(DRM), 600V V(RRM), 2
IRKTF112-06CL INFINEON

获取价格

Silicon Controlled Rectifier, 175.84A I(T)RMS, 112000mA I(T), 600V V(DRM), 600V V(RRM), 2