Data Sheet No. PD60162 Rev. V
( )
S
IR2106(4)
HIGH AND LOW SIDE DRIVER
Features
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Packages
Floating channel designed for bootstrap operation
•
Gate drive supply range from 10 to 20V (IR2106(4))
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs (IR2106)
•
8-Lead SOIC
8-Lead PDIP
•
•
•
•
•
14-Lead SOIC
14-Lead PDIP
•
Description
2106/2301//2108//2109/2302/2304Feature Comparison
The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
and low side referenced output chan-
nels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3V logic. The output driv-
Cross-
Input
logic
conduction
prevention
logic
Part
Dead-Time
Ground Pins
Ton/Toff
2106/2301
21064
2108
21084
2109/2302
21094
COM
VSS/COM
COM
VSS/COM
COM
HIN/LIN
HIN/LIN
no
none
220/200
220/200
Internal 540ns
Programmable 0.54~5µs
Internal 540ns
yes
IN/SD
yes
yes
750/200
160/140
Programmable 0.54~5µs
VSS/COM
HIN/LIN
Internal 100ns
2304
COM
ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
HIN
LIN
VB
HO
VS
HIN
LIN
TO
LOAD
COM
LO
IR2106
up to 600V
HO
VB
VS
VCC
HIN
VCC
HIN
LIN
TO
LOAD
LIN
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
IR21064
VSS
COM
LO
VSS
www.irf.com
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