Preliminary Data Sheet No. PD60162J
IR2106/IR21064
IR2107/IR21074
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Product Summary
•
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
5V Schmitt triggered input logic
V
600V max.
120 mA / 250 mA
10 - 20V
OFFSET
•
•
•
•
•
•
•
•
I +/-
O
V
OUT
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs (IR2106/IR21064)
Outputs out of phase with inputs (IR2107/IR21074)
t
(typ.)
180 ns
on/off
Delay matching
50 ns
Description
Packages
The IR2106/IR21064/IR2107/IR21074 are high volt-
age, high speed power MOSFET and IGBT drivers
with independent high and low side referenced out-
put channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction.The logic input is compatible with stan-
dard CMOS or LSTTL output. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
14 Lead SOIC
8 Lead SOIC
8 Lead PDIP
14 Lead PDIP
Typical Connection
up to 600V
VCC
VCC
VB
HIN
HIN
HIN/HIN HO
LIN
LIN
TO
LOAD
LIN/LIN
COM
VS
LO
up to 600V
IR21064/IR21074
HO
VB
VS
IR2106/IR2107
VCC
HIN
HIN
LIN
VCC
HIN/HIN
LIN/LIN
TO
LOAD
LIN
VSS
COM
LO
VSS