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IR11662STRPBF PDF预览

IR11662STRPBF

更新时间: 2024-01-07 20:16:54
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
25页 367K
描述
ADVANCED SMART RECTIFIER TM CONTROL IC

IR11662STRPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.4
Samacsys Confidence:Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=331805PCB Footprint:https://componentsearchengine.com/footprint.php?partID=331805
Samacsys PartID:331805Samacsys Image:https://componentsearchengine.com/Images/9/IR11662SPBF.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/IR11662SPBF.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:SOIC127P600X175-8NSamacsys Released Date:2017-01-11 16:49:50
Is Samacsys:N高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8标称输出峰值电流:4 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:18 V最小供电电压:11.4 V
标称供电电压:15 V表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.075 µs
接通时间:0.095 µs宽度:3.9 mm
Base Number Matches:1

IR11662STRPBF 数据手册

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IR11662S  
Absolute Maximum Ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.  
The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions.  
Parameters  
Supply Voltage  
Enable Voltage  
Cont. Drain Sense Voltage  
Pulse Drain Sense Voltage  
Source Sense Voltage  
Gate Voltage  
Operating Junction Temperature  
Storage Temperature  
Thermal Resistance  
Symbol  
VCC  
VEN  
VD  
VD  
VS  
VGATE  
TJ  
TS  
Min.  
-0.3  
-0.3  
-1  
-5  
-3  
-0.3  
-40  
-55  
Max.  
20  
20  
200  
200  
20  
Units  
V
V
V
V
Remarks  
V
V
20  
VCC=20V, Gate off  
150  
150  
128  
970  
500  
°C  
°C  
°C/W  
mW  
kHz  
R
SOIC-8  
JA  
Package Power Dissipation  
Switching Frequency  
PD  
fsw  
SOIC-8, TAMB=25°C  
Recommended Operating Conditions  
For proper operation the device should be used within the recommended conditions.  
Symbol  
VCC  
Definition  
Min.  
Max.  
18  
Units  
Supply voltage  
11.4  
V
-3 †  
-25  
---  
VD  
Drain Sense Voltage  
200  
125  
500  
TJ  
Fsw  
Junction Temperature  
Switching Frequency  
°C  
kHz  
-3V negative spike width 100ns  
VD  
Recommended Component Values  
Symbol  
RMOT  
Component  
MOT pin resistor value  
Min.  
5
Max.  
75  
Units  
kΩ  
www.irf.com  
© 2010 International Rectifier  
5

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