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IR01H(D)214 PDF预览

IR01H(D)214

更新时间: 2024-02-21 09:49:11
品牌 Logo 应用领域
英飞凌 - INFINEON 信息通信管理
页数 文件大小 规格书
7页 56K
描述
Half Bridge Based MOSFET Driver, BICMOS, PSIP7

IR01H(D)214 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SIP,Reach Compliance Code:compliant
风险等级:5.73其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PSIP-T7长度:22.86 mm
功能数量:1端子数量:7
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:9.52 mm最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
表面贴装:NO技术:BICMOS
温度等级:AUTOMOTIVE端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.2 µs
接通时间:0.2 µs宽度:3.43 mm
Base Number Matches:1

IR01H(D)214 数据手册

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Data Sheet No. PD-6.075-G  
IR01H(D)214 / IR01H(D)214-P2  
IR01H(D)224 / IR01H(D)224-P2  
IR01H(D)420 / IR01H(D)420-P2  
HIGH VOLTAGE HALF BRIDGE  
Product Summary  
Features  
Output Power MOSFETs in half-bridge configuration  
500V rated breakdown voltage  
High side gate drive designed for bootstrap  
operation  
Matched propagation delay for both channels  
Undervoltage lockout  
250V- 214/224  
500V - 420  
V
(max)  
IN  
t
130 & 90 ns  
260 ns  
on/off  
t
rr  
5V Schmitt-triggered input logic  
Half-Bridge output in phase with HIN  
R
2.0- H214  
1.1- H224  
3.0- H420  
DS(on)  
Heatsink version (P2) with improved P  
D
Description  
The IR01H(D)xxx is a high voltage, high speed half  
bridge. Proprietary HVIC and latch immune CMOS  
technologies, along with the HEXFET power  
o
P (T = 25 C)  
2.0W  
4.0W - P2  
D
A
MOSFET technology, enable ruggedized single  
package construction. The logic inputs are compat-  
ible with standard CMOS or LSTTL outputs. The  
front end features an independent high and low side  
driver in phase with the logic compatible input  
signals. The output features two HEXFETs in a half-  
bridge configuration with a high pulse current buffer  
stage designed for minimum cross-conduction in the  
half bridge. Propagation delays for the high and low  
side power MOSFETs are matched to simplify use.  
Packages  
Typical Connection  
HV DC Bus  
VIN  
NOTE: D1 is not required for  
the HD type  
D1  
Vcc  
1
6
9
7
Vcc  
HIN  
LIN  
VB  
HIN  
L IN  
2
3
V
IN  
VO  
TO  
LOAD  
COM  
4
COM  
1

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HIGH VOLTAGE HALF BRIDGE