01/99
B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
2N3954
2N3955
2N3956
Process NJ16
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 50
– 50
– 50
V
– 100 pA
– 500 nA
I = – 1µA, V = ØV
G DS
(BR)GSS
– 100
– 500
– 50
– 100
– 500
– 50
V
= – 30V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
V
= – 30V, V = ØV
DS
T = 125°C
A
GS
– 50
pA
V
= 20V, I = 200 µA
D
DS
Gate Operating Current
Gate Source Voltage
I
G
– 250
– 4.2
– 250
– 4.2
– 250 nA
V
= 20V, I = 200 µA
D
T = 125°C
A
DS
– 4.2
V
V
V
= 20V, I = 50 µA
D
DS
V
GS
– 0.5 – 4 – 0.5 – 4 – 0.5 – 4
– 1 – 4.5 – 1 – 4.5 – 1 – 4.5
V
= 20V, I = 200 µA
D
DS
Gate Source Cutoff Voltage
V
V
V = – 20V, I = 1 nA
DS G
GS(OFF)
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V
2
5
2
5
2
5
V
V
= ØV, I = 1 mA
GS(F)
DS G
I
0.5
0.5
0.5
mA
V
= 20V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
1000 3000 1000 3000 1000 3000 µS
V
= 20V, V = ØV
GS
f = 1 kHz
Common Source Forward
Transconductance
DS
g
g
fs
1000
1000
1000
µS
µS
pF
pF
V
= 20V, V = ØV
GS
f = 200 MHz
f = 1 kHz
DS
Common Source Output Capacitance
Common Source Input Capacitance
Drain Gate Capacitance
35
4
35
4
35
4
V = 20V, V = ØV
DS GS
os
C
V
= 20V, V = ØV
f = 1 MHz
f = 1 MHz
iss
DS GS
C
1.5
1.5
1.5
V
= 10V, I = ØA
dgo
dg S
Common Source Reverse
Transfer Capacitance
C
1.2
0.5
1.2
0.5
1.2
0.5
pF
V
= 20V, V = ØV
f = 1 MHz
f = 100 Hz
rss
DS GS
V
= 20V, V = ØV,
GS
DS
Noise Figure
NF
dB
nA
R = 10 MΩ
g
Differential Gate Current
| I – I
|
10
1
10
1
10
1
V
= 20V, I = 200µA
T = 125°C
A
G1
G2
DS
D
Saturation Drain Current Ratio
Differential Gate Source Voltage
I
/I
0.95
0.97
0.95
0.97
0.95
0.97
V = 20V, V = ØV
DS GS
DSS1 DSS2
| V – V
|
5
10
15
mV
V
= 20V, I = 200µA
D
GS1
GS2
DS
T = 25°C
A
0.8
2
4
mV/°C
V
= 20V, I = 200µA
D
DS
∆V – V
to = – 55°C
Differential Gate Source Voltage
with Temperature
GS1
GS2
∆T
T = 25°C
A
1
1
2.5
1
5
1
mV/°C
V
= 20V, I = 200µA
D
DS
to = +125°C
f = 1 kHz
Transconductance Ratio
g
/g
V
= 20V, I = 200µA
fs1 fs2
DS D
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
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