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INA111BUE4 PDF预览

INA111BUE4

更新时间: 2024-01-31 01:41:32
品牌 Logo 应用领域
BB 仪表放大器光电二极管PC
页数 文件大小 规格书
14页 242K
描述
High Speed FET-Input INSTRUMENTATION AMPLIFIER

INA111BUE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:5.61Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/154256.3.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=154256PCB Footprint:https://componentsearchengine.com/footprint.php?partID=154256
3D View:https://componentsearchengine.com/viewer/3D.php?partID=154256Samacsys PartID:154256
Samacsys Image:https://componentsearchengine.com/Images/9/INA111BUE4.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/INA111BUE4.jpg
Samacsys Pin Count:16Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:DW0016B
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
放大器类型:INSTRUMENTATION AMPLIFIER最大平均偏置电流 (IIB):0.00002 µA
标称带宽 (3dB):2 MHz最小共模抑制比:80 dB
最大输入失调电流 (IIO):0.00001 µA最大输入失调电压:2500 µV
JESD-30 代码:R-PDSO-G16JESD-609代码:e4
长度:10.3 mm湿度敏感等级:3
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
最大非线性:0.02%功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
电源:+-15 V认证状态:Not Qualified
座面最大高度:2.65 mm标称压摆率:17 V/us
子类别:Instrumentation Amplifier最大压摆率:4.5 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压增益:10000
最小电压增益:1标称电压增益:10
宽度:7.5 mmBase Number Matches:1

INA111BUE4 数据手册

 浏览型号INA111BUE4的Datasheet PDF文件第2页浏览型号INA111BUE4的Datasheet PDF文件第3页浏览型号INA111BUE4的Datasheet PDF文件第4页浏览型号INA111BUE4的Datasheet PDF文件第6页浏览型号INA111BUE4的Datasheet PDF文件第7页浏览型号INA111BUE4的Datasheet PDF文件第8页 
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, VS = ±15V, unless otherwise noted.  
OFFSET VOLTAGE WARM-UP vs TIME  
INPUT BIAS CURRENT vs TEMPERATURE  
75  
50  
300  
200  
100  
0
10n  
1n  
Ib  
IOS  
25  
100p  
10p  
0
G 10  
–25  
–50  
–75  
–100  
–200  
–300  
1p  
G = 1  
0.1p  
0.01p  
0
1
2
3
4
5
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Time From Power Supply Turn-On (Minutes)  
Temperature (°C)  
INPUT BIAS CURRENT  
INPUT BIAS CURRENT  
vs DIFFERENTIAL INPUT VOLTAGE  
vs COMMON-MODE INPUT VOLTAGE  
–10m  
–1m  
–10m  
–1m  
–15.7V  
–15.7V  
–100µ  
–10µ  
+1p  
–100µ  
–10µ  
+1p  
G = 1  
G = 10 G = 100  
G = 1k  
G = 1  
G = 10  
G = 100  
+10p  
+100p  
G = 1k  
+15.7V  
15  
+15.7V  
+10p  
–20  
–15  
–10  
–5  
0
5
10  
15  
20  
–20  
–15  
–10  
–5  
0
5
10  
20  
Differential Overload Voltage (V)  
NOTE: One input grounded.  
Common-Mode Voltage (V)  
MAXIMUM OUTPUT VOLTAGE SWING vs FREQUENCY  
OUTPUT CURRENT LIMIT vs TEMPERATURE  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
+ICL  
–ICL  
0
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
Temperature (°C)  
®
5
INA111  

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