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INA111BP

更新时间： 2024-02-06 10:02:49
品牌 Logo 应用领域
BB 仪表放大器放大器电路光电二极管
页数 文件大小 规格书
11页 247K
描述
High Speed FET-Input INSTRUMENTATION AMPLIFIER

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INA111BP 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.65放大器类型：INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)：0.00002 µA标称带宽 (3dB)：2 MHz
最小共模抑制比：80 dB最大输入失调电流 (IIO)：0.00001 µA
最大输入失调电压：2500 µVJESD-30 代码：R-PDSO-G16
负供电电压上限：-18 V标称负供电电压 (Vsup)：-15 V
最大非线性：0.02%功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified标称压摆率：17 V/us
供电电压上限：18 V标称供电电压 (Vsup)：15 V
表面贴装：YES温度等级：INDUSTRIAL
端子形式：GULL WING端子位置：DUAL
最大电压增益：10000最小电压增益：1
Base Number Matches：1

INA111BP 数据手册

 浏览型号INA111BP的Datasheet PDF文件第4页浏览型号INA111BP的Datasheet PDF文件第5页浏览型号INA111BP的Datasheet PDF文件第6页浏览型号INA111BP的Datasheet PDF文件第8页浏览型号INA111BP的Datasheet PDF文件第9页浏览型号INA111BP的Datasheet PDF文件第10页 
The 50kΩ term in equation 1 comes from the sum of the two  
internal feedback resistors. These are on-chip metal film  
resistors which are laser trimmed to accurate absolute val-  
ues. The accuracy and temperature coefficient of these  
resistors are included in the gain accuracy and drift specifi-  
cations of the INA111.  
APPLICATION INFORMATION  
Figure 1 shows the basic connections required for operation  
of the INA111. Applications with noisy or high impedance  
power supplies may require decoupling capacitors close to  
the device pins as shown.  
The output is referred to the output reference (Ref) terminal  
which is normally grounded. This must be a low-impedance  
connection to assure good common-mode rejection. A resis-  
tance of 2Ω in series with the Ref pin will cause a typical  
device with 90dB CMR to degrade to approximately 80dB  
CMR (G = 1).  
The stability and temperature drift of the external gain  
setting resistor, RG, also affects gain. RG’s contribution to  
gain accuracy and drift can be directly inferred from the gain  
equation (1). Low resistor values required for high gain can  
make wiring resistance important. Sockets add to the wiring  
resistance, which will contribute additional gain error (pos-  
sibly an unstable gain error) in gains of approximately 100  
or greater.  
SETTING THE GAIN  
Gain of the INA111 is set by connecting a single external  
resistor, RG:  
DYNAMIC PERFORMANCE  
The typical performance curve “Gain vs Frequency” shows  
that the INA111 achieves wide bandwidth over a wide range  
of gain. This is due to the current-feedback topology of the  
INA111. Settling time also remains excellent over wide  
gains.  
50kΩ  
RG  
G = 1 +  
(1)  
Commonly used gains and resistor values are shown in  
Figure 1.  
V+  
0.1µF  
Pin numbers are  
for DIP package.  
7
–
VIN  
INA111  
2
1
A1  
VO = G • (VI+N – VI–N  
)
10kΩ  
10kΩ  
50kΩ  
RG  
25kΩ  
25kΩ  
G = 1 +  
6
A3  
RG  
+
8
3
VO  
Load  
–
5
A2  
+
VIN  
Ref  
10kΩ  
10kΩ  
4
0.1µF  
DESIRED  
GAIN  
RG  
(Ω)  
NEAREST 1% RG  
Also drawn in simplified form:  
V–  
(Ω)  
–
VIN  
1
2
5
10  
20  
50  
100  
200  
500  
1000  
2000  
5000  
10000  
No Connection  
50.00k  
12.50k  
5.556k  
2.632k  
1.02k  
No Connection  
49.9k  
12.4k  
5.62k  
2.61k  
1.02k  
511  
INA111  
Ref  
VO  
RG  
+
VIN  
505.1  
251.3  
100.2  
50.05  
25.01  
10.00  
5.001  
249  
100  
49.9  
24.9  
10  
4.99  
FIGURE 1. Basic Connections  
®
7
INA111  
1...4567891011

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