600 V IL4216
700 V IL4217
800 V IL4218
TRIAC DRIVER OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
•
•
•
•
•
High Input Sensitivity I =1.3 mA
600/700/800 V Blocklng Voltage
300 mA On-State Current
High Static dv/dt 10,000 V/µsec., typical
Inverse Parallel SCRs Provide Commutating
dv/dt >10 KV/µsec
FT
Pin One ID.
2
1
3
LED
Triac
1
2
3
6
5
4
Anode
Anode 2
.248 (6.30)
.256 (6.50)
Substrate
do not
connect
LED
Cathode
Triac
Anode 1
4
5
6
NC
•
•
Very Low Leakage <10 µA
Isolation Test Voltage from Double Molded
.335 (8.50)
.343 (8.70)
Package 5300 VAC
RMS
.300 (7.62)
typ.
•
•
Package, 6-Pln DIP
Underwriters Lab File #E52744
.039
(1.00)
min.
.130 (3.30)
.150 (3.81)
DESCRIPTION
The IL421x consists of an AlGaAs IRLED optically
coupled to a pair of photosensitive non-zero crossing
SCR chips and are connected inversely parallel to
form a TRIAC. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package,
using high insulation double molded, over/under lead-
frame construction.
4°
18° typ.
.110 (2.79)
.150 (3.81)
typ.
.020 (.051) min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
.100 (2.54) typ.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
1.3 mA (DC).
Maximum Ratings
Emitter
Reverse Voltage ...................................................................................6 V
Forward Current ..............................................................................60 mA
Surge Current....................................................................................2.5 A
Power Dissipation.........................................................................100 mW
Derate Linearly from 25°C ......................................................1.33 mW/°C
Thermal Resistance....................................................................750 °C/W
The IL421x uses two discrete SCRs resulting in a
commutating dv/dt of greater than 10KV/µs. The use
of a proprietary dv/dt clamp results in a static dv/dt of
greater than 10KV/µs. This clamp circuit has a MOS-
FET that is enhanced when high dv/dt spikes occur
between MT1 and MT2 of the TRIAC. The FET clamps
the base of the phototransistor when conducting, dis-
abling the internal SCR predriver.
Detector
Peak Off-State Voltage
IL4216 ...........................................................................................600 V
IL4217 ...........................................................................................700 V
IL4218 ...........................................................................................800 V
RMS On-State Current...................................................................300 mA
Single Cycle Surge ...............................................................................3 A
Total Power Dissipation ................................................................500 mW
Derate Linearly from 25°C ........................................................6.6 mW/°C
Thermal Resistance.....................................................................150°C/W
The blocking voltage of up to 800 V permits control of
off-line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as 380
VAC. Current handling capability is up to 300 mA
RMS, continuous at 25°C.
The IL421x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive inductive, or
capacitive loads including motors solenoids, high cur-
rent thyristors or TRIAC and relays.
Package
Isolation Test Voltage ...........................................................5300 VAC
RMS
Storage Temperature ......................................................–55°C to +150°C
Operating Temperature ..................................................–55°C to +100°C
Lead Soldering Temperature ................................................ 260°C/5 sec.
Applications include solid-state relays, industrial con-
trols, office equipment, and consumer appliances.
Isolation Resistance
12
V =500 V, T =25°C .................................................................≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ...............................................................≥10
IO
A
5–1
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