Datasheet > IKZA75N65EH7

IKZA75N65EH7

更新时间： 2024-03-03 10:10:55

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
17页	2161K
描述
Hard-switching 650 V, 75 A?TRENCHSTOP? IGBT7?H7?discrete?in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.

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IKZA75N65EH7 数据手册

IKZA75N65EH7

™

High speed and low saturation voltage 650 V TRENCHSTOP IGBT7 technology

3 Diode

Table 3

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Total switching energy

E_ts

V_CC= 400 V, V_GE= 0/15 V, T_vj= 25 °C,

1.59

R_G(on)= 10 Ω,

R_G(oﬀ)= 10 Ω

I_C= 75 A

T_vj= 175 °C,

I_C= 75 A

2.9

Operating junction

temperature

T_vj

-40

175

°C

Diode

Table 4

Maximum rated values

Symbol Note or test condition

I_Flimited by bondwire

Parameter

Values

Unit

Diode forward current,

limited by T_vjmax

T_c= 25 °C

T_c= 100 °C

Diode pulsed current, t_p

limited by T_vjmax

I_Fpulse

P_tot

300

Power dissipation

T_c= 25 °C

258

129

T_c= 100 °C

Table 5

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.65

1.55

Unit

Min.

Max.

Diode forward voltage

V_F

I_F= 75 A

T_vj= 25 °C

T_vj= 175 °C

Diode reverse recovery

time

t_rr

Q_rr

I_rrm

V_R= 400 V, R_G(on)= 10 Ω T_vj= 25 °C,

I_F= 75 A

T_vj= 175 °C,

I_F= 75 A

108

1.87

4.5

Diode reverse recovery

charge

V_R= 400 V, R_G(on)= 10 Ω T_vj= 25 °C,

I_F= 75 A

µC

T_vj= 175 °C,

I_F= 75 A

Diode peak reverse

recovery current

V_R= 400 V, R_G(on)= 10 Ω T_vj= 25 °C,

I_F= 75 A

59.4

86.3

T_vj= 175 °C,

I_F= 75 A

(table continues...)

Datasheet

Revision 1.00

2023-04-27

1 2 3 456 7 8...17

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