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IDT71V3579YS85PFG PDF预览

IDT71V3579YS85PFG

更新时间: 2024-01-18 15:54:49
品牌 Logo 应用领域
艾迪悌 - IDT 计数器静态存储器
页数 文件大小 规格书
22页 522K
描述
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

IDT71V3579YS85PFG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 20 MM, PLASTIC, TQFP-100针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.47
Is Samacsys:N最长访问时间:8.5 ns
其他特性:FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK):87 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:4718592 bit内存集成电路类型:CACHE SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.035 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.19 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

IDT71V3579YS85PFG 数据手册

 浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第1页浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第2页浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第3页浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第5页浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第6页浏览型号IDT71V3579YS85PFG的Datasheet PDF文件第7页 
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with  
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect  
Commercial and Industrial Temperature Ranges  
AbsoluteMaximumRatings(1)  
RecommendedOperating  
TemperatureSupplyVoltage  
Commercial &  
Industrial Values  
Symbol  
Rating  
Unit  
Grade  
Temperature(1)  
0°C to +70°C  
-40°C to +85°C  
VSS  
0V  
0V  
VDD  
VDDQ  
(2)  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to +4.6  
V
Commercial  
Industrial  
3.3V±5%  
3.3V±5%  
3.3V±5%  
3.3V±5%  
(3,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to VDD  
-0.5 to VDD +0.5  
-0.5 to VDDQ +0.5  
-0 to +70  
V
V
5280 tbl 04  
NOTES:  
1. TA is the "instant on" case temperature.  
(4,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
(5,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
V
RecommendedDCOperating  
Conditions  
Commercial  
oC  
oC  
oC  
oC  
W
Symbol  
Parameter  
Min. Typ.  
3.135 3.3  
3.135 3.3  
Max.  
Unit  
V
Operating Temperature  
(7)  
TA  
VDD  
Core Supply Voltage  
3.465  
3.465  
Industrial  
-40 to +85  
Operating Temperature  
VDDQ I/O Supply Voltage  
V
TBIAS  
Temperature  
Under Bias  
-55 to +125  
VSS  
VIH  
Supply Voltage  
0
0
0
V
____  
Input High Voltage - Inputs  
Input High Voltage - I/O  
Input Low Voltage  
2.0  
VDD +0.3  
VDDQ +0.3(1 )  
0.8  
V
Storage  
-55 to +125  
TSTG  
____  
____  
VIH  
2.0  
V
Temperature  
VIL  
-0.3(2 )  
V
PT  
Power Dissipation  
DC Output Current  
2.0  
50  
5280 tbl 06  
NOTES:  
IOUT  
mA  
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.  
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.  
5280 tbl 03  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
3. VDDQ terminals only.  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supplies have  
ramped up. Power supply sequencing is not necessary; however, the voltage  
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.  
7. TA is the "instant on" case temperature.  
100PinTQFPCapacitance  
(TA = +25° C, f = 1.0mhz)  
119BGACapacitance  
(TA = +25° C, f = 1.0mhz)  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
Symbol  
CIN  
5
7
pF  
7
7
pF  
CI/O  
pF  
CI/O  
pF  
5280 tbl 07  
5280 tbl 07a  
165fBGACapacitance  
(TA = +25° C, f = 1.0mhz)  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
7
7
pF  
CI/O  
pF  
5280 tbl 07b  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.442  

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