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71V416S10YGI8 PDF预览

71V416S10YGI8

更新时间: 2024-02-17 01:56:59
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 109K
描述
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply

71V416S10YGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOJ
包装说明:SOJ, SOJ44,.44针数:44
Reach Compliance Code:compliantECCN代码:3A991
HTS代码:8542.32.00.41风险等级:5.24
Is Samacsys:N最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
JESD-609代码:e3长度:28.575 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ44,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.683 mm最大待机电流:0.02 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

71V416S10YGI8 数据手册

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3.3V CMOS Static RAM  
4 Meg (256K x 16-Bit)  
IDT71V416S  
IDT71V416L  
Description  
Features  
TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganized  
as256Kx16.Itisfabricatedusing high-perfomance,high-reliabilityCMOS  
technology.Thisstate-of-the-arttechnology,combinedwithinnovative  
circuitdesigntechniques,providesacost-effectivesolutionforhigh-speed  
memoryneeds.  
256K x 16 advanced high-speed CMOS Static RAM  
JEDEC Center Power / GND pinout for reduced noise.  
Equal access and cycle times  
– CommercialandIndustrial:10/12/15ns  
One Chip Select plus one Output Enable pin  
Bidirectional data inputs and outputs directly  
TheIDT71V416hasanoutputenablepinwhichoperatesasfastas  
5ns,withaddressaccesstimesasfastas10ns.Allbidirectionalinputsand  
outputsoftheIDT71V416areLVTTL-compatibleandoperationisfroma  
single3.3Vsupply.Fullystaticasynchronouscircuitryisused,requiring  
no clocks or refresh for operation.  
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a  
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x  
9mmpackage.  
LVTTL-compatible  
Low power consumption via chip deselect  
Upper and Lower Byte Enable Pins  
Single 3.3V power supply  
Available in 44-pin, 400 mil plastic SOJ package and a 44-  
pin, 400 mil TSOP Type II package and a 48 ball grid array,  
9mm x 9mm package.  
FunctionalBlockDiagram  
Output  
Enable  
Buffer  
OE  
Address  
Buffers  
Row / Column  
Decoders  
A0 - A17  
High  
8
8
8
8
Byte  
I/O 15  
I/O 8  
Output  
Chip  
Select  
Buffer  
Buffer  
CS  
High  
Byte  
Write  
Sense  
Amps  
and  
Write  
Drivers  
4,194,304-bit  
Memory  
Array  
Buffer  
16  
Write  
Enable  
Buffer  
Low  
Byte  
8
8
8
8
WE  
I/O 7  
I/O 0  
Output  
Buffer  
Low  
Byte  
Write  
Buffer  
BHE  
BLE  
Byte  
Enable  
Buffers  
3624 drw 01  
FEBRUARY 2013  
1
©2013IntegratedDeviceTechnology,Inc.  
DSC-3624/10  

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