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ICTE8HE3/54C PDF预览

ICTE8HE3/54C

更新时间： 2024-09-28 21:08:07
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 74K
描述
DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

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ICTE8HE3/54C 技术参数

生命周期：Obsolete包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.75最小击穿电压：9.4 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：BIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：8 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIALBase Number Matches：1

ICTE8HE3/54C 数据手册

 浏览型号ICTE8HE3/54C的Datasheet PDF文件第2页浏览型号ICTE8HE3/54C的Datasheet PDF文件第3页浏览型号ICTE8HE3/54C的Datasheet PDF文件第4页浏览型号ICTE8HE3/54C的Datasheet PDF文件第5页 
ICTE5 thru ICTE18C, 1N6373 thru 1N6386  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available  
in  
uni-directional  
and  
bi-directional  
• 1500 W peak pulse power capability  
with a 10/1000 μs waveform, repetitive  
rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
Case Style 1.5KE  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Find out more about Vishay’s Automotive Grade  
Product requirements at:  
PRIMARY CHARACTERISTICS  
VWM  
PPPM  
PD  
5.0 V to 18 V  
www.vishay.com/applications  
1500 W  
6.5 W  
TYPICAL APPLICATIONS  
IFSM  
200 A  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
TJ max.  
175 °C  
MECHANICAL DATA  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use C suffix (e.g. ICTE18C).  
Electrical characteristics apply in both directions.  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, automotive grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
Document Number: 88356  
Revision: 07-May-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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