Datasheet > ICTE-18E3

ICTE-18E3

更新时间： 2024-01-17 18:55:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	129K
描述
Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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ICTE-18E3 数据手册

ICTE-5 thru ICTE-45C, e3

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The ICTE-5 through ICTE-45C series of Transient Voltage

Suppressors (TVSs) are designed for the protection of integrated

circuits that require very low Clamping Voltages (V_C) during a

transient threat. Due to their very fast response time, protection

level and high Peak Pulse Power (P_PP) capability, they are extremely

effective in providing protection against line transients generated by:

voltage reversals, capacitive or inductive load switching,

electromechanical switching, electrostatic discharge and

electromagnetic coupling.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

This series of TVS devices is designed to protect

Bipolar, MOS and Schottky improved integrated

circuits.

•

These transient voltage suppressors are

designed for the protection of integrated

circuits. Characterized by a very low

clamping voltage together with a low standoff

voltage, they afford a high degree of

protection to: TTL, ECL, DTL, MOS, CMOS,

VMOS, HMOS, NMOS and static memory

circuits.

Transient protection for CMOS, MOS, Bipolar,

ICS (TTL, ECL, DTL, RTL and linear functions)

•

5.0 to 45 volts

Low clamping ratio

RoHS Compliant devices available by adding “e3”

suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts of Peak Pulse Power (P_PP)

•

CASE: Void-free, transfer molded

thermosetting epoxy body meeting UL94V-0

dissipation at 25^oC and 10x1000μs

FINISH: Tin-lead or RoHS Compliant matte-

Tin plating solderable per MIL-STD-750,

method 2026

t_clamping(0 volts to V_(BR)min):

<100 ps theoretical for unidirectional and <5 ns

for bidirectional

Operating and Storage temperatures: -65^oC to

•

POLARITY: Cathode connected to case and

marked. Bidirectional not marked.

•

+150^oC.

•

WEIGHT: 1.5 grams (approx.)

MOUNTING POSITION: Any

See package dimension on last page

Forward surge rating: 200 amps, 1/120 second

at 25^oC. (Applies to Unidirectional or single

direction only).

•

Steady State power dissipation: 5 watts.

Repetition rate (duty cycle): .05%

Clamping Factor: 1.33 @ Full rated power.

1.20 @ 50% rated power.

•

Clamping Factor: The ratio of the actual V_C

(Clamping Voltage) to the actual V_(BR)

(Breakdown Votlage) as measured on a

specific device.

10-09-2008 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与ICTE-18E3相关器件

型号	品牌	获取价格	描述	数据表
ICTE-18-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18-E3/4F	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18-E3/4G	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE18-E3/51	VISHAY	获取价格	TVS DIODE 18V 25.2V 1.5KE
ICTE18-E3/54	VISHAY	获取价格	TVS DIODE 18V 25.2V 1.5KE
ICTE-18-E3/56	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18-E3/70	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE18-E3/73	VISHAY	获取价格	TVS DIODE 18V 25.2V 1.5KE
ICTE-18-E3/74	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18-E3/90	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

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