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ICL7667CPA-T PDF预览

ICL7667CPA-T

更新时间: 2024-02-26 01:50:39
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
10页 324K
描述
2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, MS-001BA, DIP-8

ICL7667CPA-T 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.59
高边驱动器:NO接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.585 mm功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
座面最大高度:5.33 mm最大供电电压:15 V
最小供电电压:4.5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

ICL7667CPA-T 数据手册

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ICL7667  
current capability of the ICL7667 enables it to drive a  
1000pF load with a rise time of only 40ns. Because the  
output stage impedance is very low, up to 300mA will flow  
through the series N-Channel and P-Channel output devices  
(from V+ to V-) during output transitions. This crossover current  
is responsible for a significant portion of the internal power  
dissipation of the ICL7667 at high frequencies. It can be  
minimized by keeping the rise and fall times of the input to the  
ICL7667 below 1µs.  
2. Output stage crossover current loss  
2
3. Output stage I R power loss  
The sum of the above must stay within the specified limits for  
reliable operation.  
As noted above, the input inverter current is input voltage  
dependent, with an I of 0.1mA maximum with a logic 0  
V+  
input and 6mA maximum with a logic 1 input.  
The output stage crowbar current is the current that flows  
through the series N-Channel and P-Channel devices that  
form the output. This current, about 300mA, occurs only  
during output transitions. Caution: The inputs should never  
Application Notes  
Although the ICL7667 is simply a dual level-shifting inverter,  
there are several areas to which careful attention must be  
paid.  
be allowed to remain between V and V since this could  
IL IH  
leave the output stage in a high current mode, rapidly  
leading to destruction of the device. If only one of the drivers  
is being used, be sure to tie the unused input to V- or  
ground. NEVER leave an input floating. The average supply  
current drawn by the output stage is frequency dependent,  
Grounding  
Since the input and the high current output current paths  
both include the V- pin, it is very important to minimize and  
common impedance in the ground return. Since the ICL7667  
is an inverter, any common impedance will generate  
negative feedback, and will degrade the delay, rise and fall  
times. Use a ground plane if possible, or use separate  
ground returns for the input and output circuits. To minimize  
any common inductance in the ground return, separate the  
input and output circuit ground returns as close to the  
ICL7667 as is possible.  
as can be seen in Figure 5 (I vs Frequency graph in the  
V+  
Typical Characteristics Graphs).  
2
The output stage I R power dissipation is nothing more than  
the product of the output current times the voltage drop  
across the output device. In addition to the current drawn by  
any resistive load, there will be an output current due to the  
charging and discharging of the load capacitance. In most  
high frequency circuits the current used to charge and  
discharge capacitance dominates, and the power dissipation  
is approximately:  
Bypassing  
The rapid charging and discharging of the load capacitance  
requires very high current spikes from the power supplies. A  
parallel combination of capacitors that has a low impedance  
over a wide frequency range should be used. A 4.7µF  
tantalum capacitor in parallel with a low inductance 0.1µF  
capacitor is usually sufficient bypassing.  
(EQ. 1)  
P
= CV 2  
V f  
AC  
where C = Load Capacitance, f = Frequency  
In cases where the load is a power MOSFET and the gate  
drive requirement are described in terms of gate charge, the  
ICL7667 power dissipation will be:  
Output Damping  
Ringing is a common problem in any circuit with very fast  
rise or fall times. Such ringing will be aggravated by long  
inductive lines with capacitive loads. Techniques to reduce  
ringing include:  
(EQ. 2)  
P
= QGV f  
V
AC  
where Q = Charge required to switch the gate, in  
G
Coulombs, f = Frequency.  
• Reduce inductance by making printed circuit board traces  
as short as possible.  
Power MOS Driver Circuits  
• Reduce inductance by using a ground plane or by closely  
coupling the output lines to their return paths.  
Power MOS Driver Requirements  
Because it has a very high peak current output, the ICL7667  
the at driving the gate of power MOS devices. The high  
current output is important since it minimizes the time the  
power MOS device is in the linear region. Figure 9 is a  
typical curve of Charge vs Gate voltage for a power  
MOSFET. The flat region is caused by the Miller  
• Use a 10Ω to 30Ω resistor in series with the output of the  
ICL7667. Although this reduces ringing, it will also slightly  
increase the rise and fall times.  
• Use good by-passing techniques to prevent supply  
voltage ringing.  
capacitance, where the drain-to-gate capacitance is  
multiplied by the voltage gain of the FET. This increase in  
capacitance occurs while the power MOSFET is in the linear  
region and is dissipating significant amounts of power. The  
very high current output of the ICL7667 is able to rapidly  
Power Dissipation  
The power dissipation of the ICL7667 has three main  
components:  
1. Input inverter current loss  
FN2853.6  
April 29, 2010  
5

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