iC-MP 8-BIT HALL ANGLE ENCODER
WITH RATIOMETRIC OUTPUT
Rev B1, Page 6/22
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 5 V ±10 % , Tj = -40 ... 125 °C, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
General
001 VDD
002 I(VDD)
Supply Voltage
4.5
5
8
5.5
12
V
mA
µA
V
Supply Current in VDD
PSMI = lo, other pins open
PSMI = hi
003 I(VDD)sb Standby Supply Current
200
4.1
3.9
004 VDDon
005 VDDoff
006 VDDhys
Power-On Threshold
Power-Down Threshold
Hysteresis
Increasing voltage VDD
Decreasing voltage VDD
VDDhys = VDDon - VDDoff
3.0
2.6
200
V
mV
ms
007
ton()1
Turn-On Delay Following
Power-On
Time to data valid after enabling,
VDD: VDDoff → VDDon
Time to data valid after standby,
PSMI: hi → lo
VDD = 0 V; I() = 1 mA
VDD = 0 V; I() = 4 mA
I() = -4 mA
1
008
ton()2
Turn-On Delay Following Standby
900
1.6
1.6
-0.3
µs
V
009 Vc()hi
010 Vc()hi
011 Vc()lo
Clamp Voltage hi at
PSMI, MA, SLI, NERR
0.3
0.3
Clamp Voltage hi at
PSMO, LAO, SLO
V
Clamp Voltage lo at
-1.5
V
PSMI, PSMO, LAO, MA, SLO,
SLI, NERR, VDD, VZAP
Hall Sensor Array
101 Hext
Operating Magnetic Field
Strength
At surface of chip
20
50
100
kA/m
102 RPM
103 ferr()
104 fmag()
105 dsens
106 xpac
107 φpac
108 hpac
Permissible RPM Speed
Excessive Frequency Alarm
Magnetic Field Frequency
Diameter of Hall Sensor Array
Chip Placement Tolerance
Chip Tilt Angle
12 000
rpm
kHz
Hz
ENERR(1) = 1; NERR: hi → lo
1
2
200
mm
mm
DEG
µm
Versus DFN10 package outlines
Versus DFN10 package outlines
-0.2
-3
0.2
3
Distance Surface of Package to DFN10 package
Surface of Chip
400
Sine-To-Digital Converter
301 RES
302 HYS
303 AAabs
Converter Resolution
Per 360 degree
8
bit
Converter Hysteresis
1.4
DEG
DEG
Absolute Angle Accuracy
Magnet with 4 mm in diameter, axis centered to
chip
-3
-1
3
1
D/A Converter And Ratiometric Output LAO
401
RES()
D/A Converter Resolution
MODE(1:0) = 00 (range 360°)
MODE(1:0) = 01 (range 270°)
MODE(1:0) = 10 (range 180°)
MODE(1:0) = 11 (range 90°)
8
7.5
7
bit
bit
bit
bit
6
402 Iload()
Permissible Output Current
mA
403
dV0()hi
Output Voltage hi, Rail-To-Rail
dV0()hi = V(VDD) - V(LAO), MODE(3) = 0;
I() = -1 mA
I() = 0 mA
170
85
mV
mV
404
dV0()lo
Output Voltage lo, Rail-To-Rail
MODE(3) = 0;
I() = 1 mA
170
85
mV
mV
I() = 0 mA
405 dV1()hi
406 dV1()lo
407 Ilk()
Output Voltage hi, 10/90% Range MODE(3) = 1; I() = -1...+1 mA
Output Voltage lo, 10/90% Range MODE(3) = 1; I() = -1...+1 mA
85
5
95
15
5
%VDD
%VDD
µA
Leakage Current
Slew Rate hi
V(LAO) = 0...VDD, PSMI = hi
V(LAO): 20% → 80% of range
V(LAO): 80% → 20% of range
-5
2
408 SR()hi
409 SR()lo
V/µs
Slew Rate lo
2
V/µs
Zapping Input VZAP
501 Vt1()hi
502 Vt1()lo
Voltage Threshold hi vs. GND
Voltage Threshold lo vs. GND
2
V
V
0.8