生命周期: | Contact Manufacturer | 零件包装代码: | BGA |
包装说明: | BGA, BGA153,9X17,50 | 针数: | 153 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.34 |
最长访问时间: | 1.7 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B153 | 长度: | 22 mm |
内存密度: | 9437184 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 36 | 功能数量: | 1 |
端子数量: | 153 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 256KX36 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA153,9X17,50 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
电源: | 1.8,2.5 V | 认证状态: | Not Qualified |
座面最大高度: | 2.679 mm | 最大待机电流: | 0.15 A |
最小待机电流: | 2.38 V | 子类别: | SRAMs |
最大压摆率: | 0.69 mA | 最大供电电压 (Vsup): | 2.625 V |
最小供电电压 (Vsup): | 2.375 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IBM0436A8CXLBB-4 | IBM |
获取价格 |
Standard SRAM, 256KX36, 2ns, CMOS, PBGA153, BGA-153 | |
IBM0612404GT3B-75N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612404GT3B-7N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612404GT3B-8N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612405GT3B-75N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612405GT3B-7N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612405GT3B-8N | IBM |
获取价格 |
DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612804GT3B-75N | IBM |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612804GT3B-7N | IBM |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | |
IBM0612804GT3B-8N | IBM |
获取价格 |
DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 |