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IBM0116160BJ3-60 PDF预览

IBM0116160BJ3-60

更新时间: 2024-01-20 23:53:10
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
27页 385K
描述
x16 Fast Page Mode DRAM

IBM0116160BJ3-60 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ42,.44
针数:42Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.91Is Samacsys:N
访问模式:FAST PAGE最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J42JESD-609代码:e0
长度:27.31 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:42字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ42,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:3.76 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IBM0116160BJ3-60 数据手册

 浏览型号IBM0116160BJ3-60的Datasheet PDF文件第2页浏览型号IBM0116160BJ3-60的Datasheet PDF文件第3页浏览型号IBM0116160BJ3-60的Datasheet PDF文件第4页浏览型号IBM0116160BJ3-60的Datasheet PDF文件第5页浏览型号IBM0116160BJ3-60的Datasheet PDF文件第6页浏览型号IBM0116160BJ3-60的Datasheet PDF文件第7页 
Discontinued (9/98 - last order; 3/99 last ship)  
IBM01161601M  
x 1612/8, 5.0VMMDD35DSU-011010627. IBM0116160P1M x 1612/8, 3.3V, LP, SRMMDD35DSU-011010627. IBM0116160M 1M x 1612/8, 5.0V, LP, SRMMDD35DSU-011010627. IBM011616B1M x 1612/8, 3.3VMMDD35DSU-011010627.  
IBM0116160 IBM0116160M  
IBM0116160B IBM0116160P  
1M x 16 12/8 DRAM  
Features  
• Low Power Dissipation  
• 1,048,576 word by 16 bit organization  
- Active (max) - 50 mA / 45 mA  
- Standby: TTL Inputs (max) - 2.0 mA  
- Standby: CMOS Inputs (max)  
- 1.0 mA (SP version)  
• Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply  
• Standard Power (SP) and Low Power (LP)  
- 0.1 mA (LP version)  
- Self Refresh (LP version only)  
- 200µA (3.3 Volt)  
• 4096 Refresh Cycles  
- 64 ms Refresh Rate (SP version)  
- 256 ms Refresh Rate (LP version)  
- 300µA (5.0 Volt)  
• High Performance:  
• 2 CAS  
-50  
50  
13  
25  
95  
35  
-60  
60  
Units  
ns  
• Fast Page Mode  
tRAC  
tCAC  
tAA  
RAS Access Time  
• Read-Modify-Write  
CAS Access Time  
15  
ns  
• RAS Only and CAS before RAS Refresh  
• Hidden Refresh  
Column Address Access Time  
Cycle Time  
30  
ns  
tRC  
110  
40  
ns  
• Package: TSOP-II 50/44 (400mil x 825mil)  
SOJ 42/42 (400mil)  
tPC  
Fast Page Mode Cycle Time  
ns  
Description  
vide high performance, low power dissipation, and  
high reliability. The devices operate with a single  
3.3V ± 0.3V or 5.0V ± 0.5V power supply. The 20  
addresses required to access any bit of data are  
multiplexed (12 are strobed with RAS, 8 are strobed  
with CAS).  
The IBM0116160 is a dynamic RAM organized  
1,048,576 words by 16 bits, which has a very low  
“sleep mode” power consumption option. These  
devices are fabricated in IBM’s advanced 0.5µm  
CMOS silicon gate process technology. The circuit  
and process have been carefully designed to pro-  
Pin Assignments (Top View)  
Pin Description  
RAS  
LCAS / UCAS  
WE  
Row Address Strobe  
L/U Column Address Strobe  
Read/Write Input  
Address Inputs  
50/44 TSOP  
42/42 SOJ  
VCC  
IO0  
IO1  
IO2  
IO3  
VCC  
IO4  
IO5  
IO6  
IO7  
NC  
1
50  
VSS  
VCC  
IO0  
IO1  
IO2  
IO3  
VCC  
IO4  
IO5  
IO6  
IO7  
1
2
3
4
5
6
7
8
42  
VSS  
2
3
4
5
49 IO15  
48 IO14  
47 IO13  
46 IO12  
41 IO15  
40 IO14  
39 IO13  
38 IO12  
A0 - A11  
OE  
Output Enable  
6
7
8
9
10  
11  
45  
VSS  
37  
VSS  
44 IO11  
43 IO10  
42 IO9  
41 IO8  
40 NC  
36 IO11  
35 IO10  
34 IO9  
I/O0 - I/O15  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
9
33  
32 NC  
IO8  
10  
11  
VSS  
NC  
NC  
NC  
WE  
RAS  
A11 19  
A10  
A0  
A1  
A2  
A3  
15  
16  
17  
18  
36 NC  
35 LCAS  
34 UCAS  
33 OE  
32 A9  
31 A8  
30 A7  
29 A6  
28 A5  
27 A4  
NC  
WE  
RAS  
A11 15  
A10  
A0  
12  
13  
14  
31 LCAS  
30 UCAS  
29 OE  
28 A9  
27 A8  
26 A7  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
A1  
A2  
25 A6  
24 A5  
A3  
VCC  
20  
21  
23 A4  
22  
VSS  
VCC  
26  
VSS  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
43G9618  
SA14-4207-06  
Revised 4/97  
Powered by ICminer.com Electronic-Library Service CopyRight 2003  

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