HZS11NB3TE

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HZS11NB3TE 数据手册

HZS-N Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

REJ03G0185-0100Z

(Previous: ADE-208-124)

Rev.1.00

Mar.11.2004

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc.

•

Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-N Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.1.00, Mar.11.2004, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS11NB4	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS12	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS12A1	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS12A1	HITACHI	获取价格	Zener Diode, 11.85V V(Z), 2.11%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
HZS12A1	EIC	获取价格	Zener Diode,
HZS12A1	SWST	获取价格	稳压二极管
HZS12A1-E	RENESAS	获取价格	暂无描述
HZS12A1L	HITACHI	获取价格	Zener Diode, 11.85V V(Z), 2.11%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
HZS12A1L	EIC	获取价格	Zener Diodes
HZS12A1LRY	HITACHI	获取价格	Zener Diode, 0.4W, Silicon, Unidirectional, DO-34, DO-34, 2 PIN