Datasheet > HZS11L2

HZS11L2

更新时间： 2024-01-12 14:11:54

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管齐纳二极管
页数	文件大小	规格书
7页	74K
描述
Silicon Epitaxial Planar Zener Diode for Low Noise Application

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HZS11L2 数据手册

HZS-L Series

Silicon Epitaxial Planar Zener Diode for

Low Noise Application

REJ03G0166-0200Z

(Previous: ADE-208-121A)

Rev.2.00

Jan.06.2004

Features

•

Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

stabilized power supply, etc.

•

Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-L Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.2.00, Jan.06.2003, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS11L3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS11LA1	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS11LA1	SWST	获取价格	稳压二极管
HZS11LA2	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS11LA2	SWST	获取价格	稳压二极管
HZS11LA3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS11LA3	SWST	获取价格	稳压二极管
HZS11LB1	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS11LB1	SWST	获取价格	稳压二极管
HZS11LB2	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application