Datasheet > HYB18M256160CF-6/7.5

HYB18M256160CF-6/7.5

更新时间： 2024-02-27 03:52:09

品牌	Logo	应用领域
奇梦达 - QIMONDA		动态存储器
页数	文件大小	规格书
26页	1614K
描述
DRAMs for Mobile Applications

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HYB18M256160CF-6/7.5 数据手册

Internet Data Sheet

HY[B/E]18M256[16/32]0CF

256-Mbit DDR Mobile-RAM

1.3

Description

The HY[B/E]18M256[16/32]0CF is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is

internally configured as a quad-bank DRAM.

The HY[B/E]18M256[16/32]0CF uses a double-data-rate architecture to achieve high-speed operation. The double-data-rate

architecture is essentially a 2n pre fetch architecture, with an interface designed to transfer two or four data words per clock

cycle at the I/O pins. A single READ or WRITE access for the HY[B/E]18M256[16/32]0CF consists of a single 2n-bit wide, one

clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the

I/O pins.

The HY[B/E]18M256[16/32]0CF is especially designed for mobile applications. It operates from a 1.8V power supply. Power

consumption in self refresh mode is drastically reduced by an On-Chip Temperature Sensor (OCTS); it can further be reduced

by using the programmable Partial Array Self Refresh (PASR).

A conventional data-retaining Power-Down (PD) mode is available as well as a non-data-retaining Deep Power-Down (DPD)

mode. For further power-savings the clock may be stopped during idle periods.

The HY[B/E]18M256[16/32]0CF is housed in a BGA package. It is available in Standard (-0°C to +70°C) and Extended (-25°C

to +85°C) temperature ranges.

Rev.1.44, 2007-07

06262007-JK8G-48BV

1...3 4 567 8 9...26

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型号	品牌	获取价格	描述	数据表
HYB18M256160CF-7.5	QIMONDA	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, 10 X 10.50 MM, 1 MM HEIGHT, GREEN, VFBGA-60
HYB18M256320CF	QIMONDA	获取价格	DRAMs for Mobile Applications
HYB18M256320CF-6/7.5	QIMONDA	获取价格	DRAMs for Mobile Applications
HYB18M512160AF-7.5	INFINEON	获取价格	DDR DRAM, 32MX16, 6.5ns, CMOS, PBGA60
HYB18M512160AF-8	INFINEON	获取价格	DDR DRAM, 32MX16, 7ns, CMOS, PBGA60
HYB18M512160BF-6	QIMONDA	获取价格	DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYB18M512160BF-7.5	QIMONDA	获取价格	DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYB18M512160BFX	QIMONDA	获取价格	DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
HYB18M512160BFX-7.5	QIMONDA	获取价格	DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
HYB18RL25616AC	INFINEON	获取价格	256 Mbit DDR Reduced Latency DRAM