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HY5V56BSF-PI PDF预览

HY5V56BSF-PI

更新时间: 2024-02-29 15:55:51
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器内存集成电路
页数 文件大小 规格书
12页 287K
描述
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54

HY5V56BSF-PI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B54
JESD-609代码:e1长度:13.5 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.07 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:8 mm
Base Number Matches:1

HY5V56BSF-PI 数据手册

 浏览型号HY5V56BSF-PI的Datasheet PDF文件第1页浏览型号HY5V56BSF-PI的Datasheet PDF文件第2页浏览型号HY5V56BSF-PI的Datasheet PDF文件第3页浏览型号HY5V56BSF-PI的Datasheet PDF文件第5页浏览型号HY5V56BSF-PI的Datasheet PDF文件第6页浏览型号HY5V56BSF-PI的Datasheet PDF文件第7页 
HY5V56B(L/S)F-I  
FUNCTIONAL BLOCK DIAGRAM  
4Mbit x 4banks x 16 I/O Synchronous DRAM  
Self refresh logic  
& timer  
Internal Row  
counter  
4Mx16 Bank 3  
4Mx16 Bank 2  
CLK  
Row  
Pre  
Row active  
CKE  
CS  
Decoders  
4Mx16 Bank 1  
4Mx16 Bank 0  
DQ0  
DQ1  
RAS  
CAS  
WE  
Memory  
Cell  
refresh  
Array  
Column  
Active  
Column  
Pre  
UDQM  
LDQM  
Decoders  
DQ14  
DQ15  
Y decoders  
Column Add  
Counter  
Bank Select  
A0  
A1  
Address  
Registers  
Burst  
Counter  
A112  
BA0  
BA1  
CAS Latency  
Pipe Line Control  
Mode Registers  
Data Out Control  
Rev. 0.1/Sep. 02  
5

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