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HY5DS573222F PDF预览

HY5DS573222F

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
28页 323K
描述
256M(8Mx32) GDDR SDRAM

HY5DS573222F 数据手册

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1HY5DS573222F(P)  
PIN DESCRIPTION  
PIN  
TYPE  
DESCRIPTION  
Clock: CK and /CK are differential clock inputs. All address and control input signals are  
sampled on the crossing of the positive edge of CK and negative edge of /CK. Output  
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).  
CK, /CK  
Input  
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and  
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER  
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row  
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF  
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE  
must be maintained high throughout READ and WRITE accesses. Input buffers, excluding  
CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are  
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW  
level after Vdd is applied.  
CKE  
Input  
Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-  
mands are masked when CS is registered high. CS provides for external bank selection on  
systems with multiple banks. CS is considered part of the command code.  
/CS  
Input  
Input  
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-  
CHARGE command is being applied.  
BA0, BA1  
Address Inputs: Provide the row address for ACTIVE commands, and the column address  
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the  
memory array in the respective bank. A8 is sampled during a precharge command to  
determine whether the PRECHARGE applies to one bank (A8 LOW) or all banks (A8  
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The  
address inputs also provide the op code during a MODE REGISTER SET command. BA0  
and BA1 define which mode register is loaded during the MODE REGISTER SET command  
(MRS or EMRS).  
A0 ~ A11  
Input  
Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being  
entered.  
/RAS, /CAS, /WE  
DM0 ~ DM3  
Input  
Input  
Input Data Mask: DM(0~3) is an input mask signal for write data. Input data is masked  
when DM is sampled HIGH along with that input data during a WRITE access. DM is sam-  
pled on both edges of DQS. Although DM pins are input only, the DM loading matches the  
DQ and DQS loading. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the  
data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the  
data on DQ24-Q31.  
Data Strobe: Output with read data, input with write data. Edge aligned with read data,  
centered in write data. Used to capture write data. DQS0 corresponds to the data on  
DQ0-Q7; DQS1 corresponds to the data on DQ8-Q15; DQS2 corresponds to the data on  
DQ16-Q23; DQS3 corresponds to the data on DQ24-Q31  
D Q S 0 ~ D Q S 3  
I / O  
DQ0 ~ DQ31  
VDD/VSS  
VDDQ/VSSQ  
VREF  
I/O  
Data input / output pin : Data Bus  
Supply  
Supply  
Supply  
NC  
Power supply for internal circuits and input buffers.  
Power supply for output buffers for noise immunity.  
Reference voltage for inputs for SSTL interface.  
No connection.  
NC  
Rev. 1.0 / Feb. 2005  
5

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