是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TSOP1 |
包装说明: | 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.84 |
最长访问时间: | 12000 ns | JESD-30 代码: | R-PDSO-G48 |
JESD-609代码: | e6 | 长度: | 18.4 mm |
内存密度: | 1073741824 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 64MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 类型: | NAND TYPE |
宽度: | 12 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY27SA161G1M-TPES | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
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HY27SA161G1M-TPI | HYNIX |
获取价格 |
暂无描述 |
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HY27SA161G1M-TPIP | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
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HY27SA161G1M-TPIS | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
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HY27SA161G1M-VCB | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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HY27SA161G1M-VCP | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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HY27SA161G1M-VCS | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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HY27SA161G1M-VEB | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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HY27SA161G1M-VES | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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HY27SA161G1M-VIS | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, WSOP1-48 |
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