Datasheet > HY060N08B

HY060N08B

更新时间： 2024-02-18 16:31:51

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
13页	4338K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY060N08B 数据手册

HY060N08P/M/B/MF

N-Channel Enhancement Mode MOSFET

Pin Description

eatures

85V/100A

R_DS(ON)= 5.0 mW (typ.) @ V_GS=10V

100% avalanche tested

Reliable and Rugged

TO-220FB-3S

TO-220FB-3L

Lead Free andGreenDevicesAvailable

(RoHS Compliant)

pplications

TO-263-2L

TO-220MF-3L

Switching application

Power Management for Inverter Systems.

N-ChannelMOSFET

Ordering and Marking Information

Package Code

P : TO-220FB-3L

M : TO-220FB-3S

MF: TO-220MF-3L

HY060N08

B : TO-263-2L

YYXXXJWW G

Assembly Material

Date Code

HY060N08

YYXXXJWW G

YYXXX WW

G : Lead Free Device

Note:

termination finish; which are fully compliant with RoHS.

requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.

lead-free products contain molding compounds/die attach materials and 100% matte tin plate

HOOYI

lead-free products meet or exceed the lead-free

HOOYI

defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in

homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

HOOYI

www.hooyi.cc

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