Datasheet > HX6136FBNT

HX6136FBNT

更新时间： 2024-02-28 06:04:22

品牌	Logo	应用领域
其他 - ETC		先进先出芯片
页数	文件大小	规格书
16页	159K
描述
x36 Synchronous FIFO

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HX6136FBNT 技术参数

生命周期：	Obsolete	包装说明：	DFP,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.71	风险等级：	5.68
最长访问时间：	30 ns	周期时间：	34 ns
JESD-30 代码：	R-CDFP-F32	长度：	20.828 mm
内存密度：	36864 bit	内存宽度：	36
功能数量：	1	端子数量：	32
字数：	1024 words	字数代码：	1000
工作模式：	SYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	1KX36
可输出：	YES	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	DFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	3.81 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	15.24 mm
Base Number Matches：	1

HX6136FBNT 数据手册

Aerospace Electronics

FIFO—SOI

HX6409

HX6218

HX6136

FEATURES

• 1K x 36, 2K x 18, 4K x 9 Organizations

OTHER

• Fabricated with RICMOS^™IV Silicon on Insulator

• Read/Write Cycle Times

(SOI) 0.8 µm Process (L_eff= 0.65µm)

<35 ns (-55° to 125°C)

• Expandable in Width

RADIATION

• Supports Free-Running 50% Duty Cycle Clock

• Empty, Full, Half Full, 1/4 Full, 3/4 Full, Error Flags

• Parity Generation/Checking

• Total Dose Hardness through 1x10⁶rad(SiO₂)

• Neutron Hardness through 1x10¹⁴cm^-2

• Dynamic and Static Transient Upset Hardness

through 1x10⁹rad(Si)/s

• Fully Asynchronous with Simultaneous

Read and Write Operation

• Dose Rate Survivability through 1x10¹¹rad(Si)/s

• Soft Error Rate of <1x10^-10upsets/bit-day

• No Latchup

• Output Enable (OE)

• CMOS or TTL Compatible I/O

• Single 5 V ± 10% Power Supply

• Various Flat Pack Options

GENERAL DESCRIPTION

The HX6409, HX6218, and HX6136 are high speed, low-

power, first-in first-out memories with clocked read and

write interfaces. The HX6409 is a 4096 word by 9 bit

memory array, the HX6218 is a 2048 word by 18 bit

memory array, and the HX6136 is a 1024 word by 36 bit

memory array. The FIFOs support width expansion while

depthexpansionrequiresexternallogiccontrolusingstate

machinetechniques.Featuresincludeprogrammablepar-

ity control, an empty/full flag, a quarter/three quarter full

flag, a half full flag and an error flag.

The output port is controlled in a similar manner by a free-

running read clock (CKR) and a read enable pin (

). In

ENR

addition, the three FIFOs have an output enable pin (

and a master reset pin (

)

). The read (CKR) and write

(CKW) clocks may be tied together for single-clock

operation or the two clocks may be run independently for

asynchronous read/write applications. Clock frequencies

up to 30 MHz are achievable in the three configurations.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation In-

sensitive CMOS) technology is radiation hardened through

the use of advanced and proprietary design, layout and

process hardening techniques. The FIFO is fabricated with

Honeywell’s radiation hardened technology, and is de-

signed for use in systems operating in radiation environ-

ments. The SOI RICMOS™ IV process is a 5-volt, SIMOX

CMOS technology with a 150 Å gate oxide and a minimum

drawn feature size of 0.8 µm, (0.65 µm effective gate

array—L_eff). Additional features include tungsten via plugs,

Honeywell’s proprietary SHARP planarization process,

andalightlydopeddrain(LDD)structureforimprovedshort

channel reliability.

These FIFOs provide solutions for a wide variety of data

buffering needs, including high-speed data acquisition,

multiprocessor interfaces, and communications buffer-

ing. These FIFOs have separate input and output ports

that are controlled by separate clock and enable sig-

nals. The input port is controlled by a free running clock

(CKW) and a write enable pin

. When

ENW

asserted, data is written into the FIFO on the rising edge

of the CKW signal. While is held active, data is

ENW

continually written into the FIFO on each CKW cycle.

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com

12 3 4 5 6 7...16

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与HX6136FBNT相关器件

型号	品牌	获取价格	描述	数据表
HX6136FBRC	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FBRT	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FEFT	HONEYWELL	获取价格	FIFO, 1KX36, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FEHC	HONEYWELL	获取价格	FIFO, 1KX36, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FEHT	HONEYWELL	获取价格	FIFO, 1KX36, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FENC	ETC	获取价格	x36 Synchronous FIFO
HX6136FENT	ETC	获取价格	x36 Synchronous FIFO
HX6136FERC	HONEYWELL	获取价格	FIFO, 1KX36, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FERT	HONEYWELL	获取价格	FIFO, 1KX36, Synchronous, CMOS, CQFP132, CERAMIC, QFP-132
HX6136FQFC	ETC	获取价格	x36 Synchronous FIFO

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