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HSMBJ5933 PDF预览

HSMBJ5933

更新时间: 2024-02-07 22:12:13
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
3页 292K
描述
Transient Voltage Suppressor

HSMBJ5933 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.92Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:17.5 Ω
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.56 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:20%工作测试电流:17 mA
Base Number Matches:1

HSMBJ5933 数据手册

 浏览型号HSMBJ5933的Datasheet PDF文件第2页浏览型号HSMBJ5933的Datasheet PDF文件第3页 
HSMBJ5913 thru HSMBJ5936  
Transient Voltage Suppressor  
Breakdown Voltage 3.3 to 30 Volts  
Features  
CASE: SMB (DO214AA)  
Extensive Voltages selection from 3.3 to 30V  
Silicon 3.0 Watt Zener Diodes  
Ideal for high-density and low-profile mounting  
Regulates voltage over a broad operang current  
and temperature range  
Flexible axial-lead mounting rminals  
High specified maximum current(IZM) when  
adequately heat sinking  
Application  
Use in sensitive eletronics protectioagainst voltage  
transiens induced by inductive load witching and  
lighting oIC, MOSFE, signal lines of sensor units  
for consumer, omputer, industrial, automotive and  
telecommuicatn  
Mechanical Data  
Case: Void-free transfer molded thermosetting epoxy  
body meeting UL94V-O  
Terminals: Tin-Lead or ROHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-750,  
Method 2026  
Marking: Body marked with part number  
Polarity: Cathode indicated by band  
Weight: 0.093gApproximately)  
Dimenons in inches nd (millimeters)  
Maximum Ratings and Electrical Characteristics @ 25OC unless otherwise specified  
Conditions  
Symbol  
Value  
Unit  
Steady state power at TL 1050.375”(10mm) from body  
3.0  
W
PM(AV)  
Steady state power at TA=25when mounted on FR4 PC described for  
thermal resistance (also see Fig.1)  
1.56  
W
VF  
RθJL  
Maximum instantaneous forward voltage at 200mA  
Thermal resistance junction to lead  
1.2  
15  
V
/W  
/W  
RθJA  
Thermal resistance junction to ambient  
Operating and Storage Temperature  
80  
TJ, TSTG  
-65 to +150  
Document Number: HSMBJ5913 thru HSMBJ5936  
Feb.29, 2012  
www.smsemi.com  
1

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