Datasheet > HSD8M64D8H-13

HSD8M64D8H-13

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	98K
描述
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on 8Mx8,4Banks, 4K Ref., 3.3V

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HSD8M64D8H-13 数据手册

HANBit

HSD8M64D8H

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )

PARAMETER

Supply Voltage

SYMBOL

Vcc

V_IH

MIN

3.0

2.0

-0.3

2.4

TYP.

MAX

3.6

UNIT

NOTE

3.3

Input High Voltage

Input Low Voltage

Output High Voltage

Output Low Voltage

3.0

Vcc+0.3

0.8

V_IL

V_OH

V_OL

I_OH= -2mA

I_OL= 2mA

0.4

Input leakage current

I _LI

-10

Notes :

1. V_IH(max) = 5.6V AC. The overshoot voltage duration is £ 3ns.

2. V_IL(min) = -2.0V AC. The undershoot voltage duration is £ 3ns.

3. Any input 0V £ V_IN£ V_DDQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

DESCRIPTION

SYMBOL

C_CLK

MIN

MAX

UNITS

Clock

/RAS, /CAS,/WE,/CS, CKE, DQM

Address

C_IN

C_ADD

DQ (DQ0 ~ DQ7)

C_OUT

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

TEST

VERSION

-10

NOT

PARAMETER

SYMBOL

UNIT

CONDITION

Burst length = 1

-13

10L

Operating current

(One bank active)

I_CC1

t_RC³ t_RC(min)

600

560

I_O= 0mA

CKE £ V_IL(max)

t_CC=10ns

Precharge

standby I_CC2

current in

CKE & CLK £ V_IL(max)

t_CC=¥

power-down mode

I_CC2PS

CKE ³ V_IH(min)

CS* ³ V_IH(min), t_CC=10ns

Input signals are changed

one time during 20ns

CKE ³ V_IH(min)

I_CC2

120

Precharge

current in

standby

non power-down mode

I_CC2NS

CLK £ V_IL(max), t_CC=¥

Input signals are stable

URL:www.hbe.co.kr

REV.1.0(August.2002)

HANBit Electronics Co.,Ltd.

1 2 3 456 7 8...10

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