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HS9-4080ARH PDF预览

HS9-4080ARH

更新时间： 2024-01-25 22:41:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器
页数 文件大小 规格书
4页 85K
描述
Radiation Hardened Full Bridge N-Channel FET Driver

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中文翻译

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HS9-4080ARH 技术参数

是否无铅： 不含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DFP
包装说明：DFP,针数：20
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.77
高边驱动器：NO接口集成电路类型：FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-CDFP-F20JESD-609代码：e0
功能数量：1端子数量：20
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DFP
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
筛选级别：MIL-PRF-38535 Class V座面最大高度：2.92 mm
最大供电电压：18 V最小供电电压：12 V
表面贴装：YES温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：FLAT
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED总剂量：300k Rad(Si) V
宽度：6.92 mmBase Number Matches：1

HS9-4080ARH 数据手册

 浏览型号HS9-4080ARH的Datasheet PDF文件第2页浏览型号HS9-4080ARH的Datasheet PDF文件第3页浏览型号HS9-4080ARH的Datasheet PDF文件第4页 
HS-4080ARH  
Data Sheet  
Febuary 2000  
File Number 4563.3  
Radiation Hardened Full Bridge  
Features  
N-Channel FET Driver  
• Electrically Screened to SMD # 5962-99617  
The HS-4080ARH is a monolithic, high frequency, medium  
voltage Full Bridge N-Channel FET Driver IC. The device  
includes a TTL-level input comparator, which can be used to  
facilitate the “hysteresis” and PWM modes of operation. Its  
HEN (high enable) lead can force current to freewheel in the  
bottom two external power MOSFETs, maintaining the upper  
power MOSFETs off. The HS-4080ARH is well suited for use  
in distributed DC power supplies and DC to DC converters,  
since it can switch at high frequencies.  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
- Gamma Dose . . . . . . . . . . . . . . . . . 300kRAD(Si) (Max)  
- Latch-up Immune RSG DI Process  
• Drives N-Channel FET Full Bridge Including High Side  
Chop Capability  
• Bootstrap Supply Max Voltage to 95V  
• TTL Comparator Input Levels  
DC  
These devices can also drive medium voltage motors, and  
two HS-4080ARHs can be used to drive high performance  
stepper motors, since the short minimum “on-time” can  
provide fine micro-stepping capability.  
• Drives 1000pF Load with Rise and Fall Times of 50ns  
• User-Programmable Dead Time  
• Charge-Pump and Bootstrap Maintain Upper Bias  
Supplies  
Short propagation delays maximize control loop crossover  
frequencies and dead-times, which can be adjusted to near  
zero to minimize distortion, resulting in precise control of the  
driven load.  
• DIS (Disable) Pin Pulls Gates Low  
• Operates From Single Supply . . . . . . . . . . . . . 12V to 18V  
• Low Power Consumption  
Constructed with the Intersil dielectrically isolated Rad Hard  
Silicon Gate (RSG) process, these devices are immune to  
Single Event Latch-up and have been specifically designed  
to provide highly reliable performance in harsh radiation  
environments. Complete your design with radiation  
hardened MOSFETs from Intersil.  
• Undervoltage Protection  
Applications  
• Full Bridge Power Supplies  
• PWM Motion Control  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Ordering Information  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-99617. A “hot-link” is provided  
on our homepage for downloading.  
o
ORDERING NUMBER  
5962F9961701VSC  
5962F9961701QSC  
HS9-4080ARH/Proto  
( C)  
HS9-4080ARH-Q  
HS9-4080ARH-8  
HS9-4080ARH/Proto  
-55 to 125  
-55 to 125  
-55 to 125  
http://www.intersil.com/spacedefense/space.htm  
Pinout  
HS-4080ARH (FLATPACK, CDFP3-F20)  
TOP VIEW  
BHB  
HEN  
DIS  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
BHO  
BHS  
BLO  
BLS  
VDD  
VCC  
ALS  
ALO  
AHS  
AHO  
VSS  
OUT  
IN+  
IN-  
HDEL  
LDEL  
AHB  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
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