Datasheet > HS-4080AEH

HS-4080AEH

更新时间： 2023-12-20 18:45:08

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	357K
描述
Radiation Hardened Full Bridge N-Channel FET Driver

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HS-4080AEH 数据手册

DATASHEET

HS-4080AEH

Radiation Hardened Full Bridge N-Channel FET Driver

FN4563

Rev 6.00

May 27, 2015

The HS-4080AEH is a monolithic, high frequency, medium

voltage Full Bridge N-Channel FET Driver IC. The device

includes a TTL-level input comparator, which can be used to

facilitate the “hysteresis” and PWM modes of operation. Its

HEN (High Enable) lead can force current to freewheel in the

bottom two external power MOSFETs, maintaining the upper

power MOSFETs off. The HS-4080AEH is well suited for use in

distributed DC power supplies and DC/DC converters, since it

can switch at high frequencies.

Features

• Electrically screened to SMD # 5962-99617

• QML qualified per MIL-PRF-38535 requirements

• Radiation environment

- Gamma dose . . . . . . . . . . . . . . . . . . . . . 300kRAD(Si) (max)

- Latch-up immune RSG DI process

• Drives N-Channel FET full bridge including high-side chop

capability

This device can also drive medium voltage motors and two

HS-4080AEHs can be used to drive high performance stepper

motors, since the short minimum “on-time” can provide fine

micro-stepping capability.

• Bootstrap supply max voltage to 95V

• TTL comparator input levels

• Drives 1000pF load with rise and fall times of 50ns

• User-programmable dead time

Short propagation delays maximize control loop crossover

frequencies and dead times, which can be adjusted to near

zero to minimize distortion, resulting in precise control of the

driven load.

• Charge-pump and bootstrap maintain upper bias supplies

• DIS (Disable) pin pulls gates low

Constructed with the Intersil dielectrically isolated radiation

hardened Silicon Gate (RSG) process, this device is immune to

single event latch-up and has been specifically designed to

provide highly reliable performance in harsh radiation

environments. Complete your design with radiation hardened

MOSFETs from Intersil.

• Operates from single supply. . . . . . . . . . . . . . . . . . 12V to 18V

• Low power consumption

• Undervoltage protection

Applications

• Full bridge power supplies

• PWM motion control

Detailed Electrical Specifications for these devices are

contained in SMD 5962-99617.

Application Block Diagram

80V

12V

BHO

BHS

LOAD

HEN

DIS

BLO

HS-4080AEH

IN+

IN-

ALO

AHS

AHO

GND

FIGURE 1. APPLICATION BLOCK DIAGRAM

FN4563 Rev 6.00

May 27, 2015

Page 1 of 7

12 3 4 5 6 7

中文翻译

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与HS-4080AEH相关器件

型号	品牌	获取价格	描述	数据表
HS-4080ARH	INTERSIL	获取价格	Radiation Hardened Full Bridge N-Channel FET Driver
HS409	ETC	获取价格	Heatshrink Adhesive Lined
HS40CD/2J5W1	COOPER	获取价格	EDGE CONNECTOR,PCB MNT,RECEPT,80 CONTACTS,0.1 PITCH,COMPLIANT FIT TERMINAL
HS40CT/2J5W1	COOPER	获取价格	Card Edge Connector, 80 Contact(s), 2 Row(s), Straight, 0.1 inch Pitch, Press Fit Terminal
HS40DT/2J5S1	COOPER	获取价格	EDGE CONNECTOR,PCB MNT,RECEPT,80 CONTACTS,0.1 PITCH,COMPLIANT FIT TERMINAL
HS410	ETC	获取价格	Heatshrink Adhesive Lined
HS-4-10	RICHCO	获取价格	HEX SPACER STANDOFFS
HS4-10	RICHCO	获取价格	HEX SPACER STANDOFFS
HS4101	RENESAS	获取价格	Relative Humidity and Temperature Sensor, Ana
HS4103	RENESAS	获取价格	Relative Humidity and Temperature Sensor, Ana

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