Datasheet > HS-2420EH

HS-2420EH

更新时间： 2024-09-29 14:57:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	447K
描述
Radiation Hardened Fast Sample and Hold

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HS-2420EH 数据手册

DATASHEET

HS-2420EH

Radiation Hardened Fast Sample and Hold

FN8727

Rev 0.00

March 17, 2015

The HS-2420EH is a radiation hardened monolithic circuit

consisting of a high performance operational amplifier with its

output in series with an ultra-low leakage analog switch and a

MOSFET input unity gain amplifier.

Features

• Electrically screened to SMD #5962-95669

• QML qualified per MIL-PRF-38535 requirements

With an external hold capacitor connected to the switch

output, a versatile high performance sample-and-hold or

track-and-hold circuit is formed. When the switch is closed, the

device behaves as an operational amplifier and any of the

standard op amp feedback networks may be connected

around the device to control gain, frequency response, etc.

When the switch is opened, the output will remain at its last

level.

• Maximum acquisition time

- 10V Step to 0.1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4µs

- 10V Step to 0.01%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6µs

• Maximum drift current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10nA

(maximum over-temperature)

• TTL compatible control input

• Power supply rejection . . . . . . . . . . . . . . . . . . . . . . . . . 80dB

Performance as a sample-and-hold compares very favorably

with other monolithic, hybrid, modular and discrete circuits.

Accuracy to better than 0.01% is achievable over the

temperature range. Fast acquisition is coupled with superior

droop characteristics, even at high temperatures. High slew

rate, wide bandwidth and low acquisition time produce

excellent dynamic characteristics. The ability to operate at

gains greater than 1 frequently eliminates the need for

external scaling amplifiers.

• Radiation tolerance

- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*

* Only the EH device is wafer-by-wafer acceptance tested at

the low dose rate and guaranteed to 50krad(Si). The

100krad(Si) limit is established by characterization only.

• No latch-up

The device may also be used as a versatile operational

amplifier with a gated output for applications such as analog

switches, peak holding circuits, etc.

Applications

• Data acquisition systems

• D to A deglitcher

• Auto zero systems

• Peak detector

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are

contained in SMD 5962-95669.

• Gated op amp

OFFSET

ADJUST

V+

- INPUT

+ INPUT

OUTPUT

HS-2420EH

SAMPLE/

HOLD

CONTROL

GND V-

HOLD

CAPACITOR

FIGURE 1. FUNCTIONAL DIAGRAM

FN8727 Rev 0.00

March 17, 2015

Page 1 of 11

12 3 4 5 6 7...11

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与HS-2420EH相关器件

型号	品牌	获取价格	描述	数据表
HS-2420RH	INTERSIL	获取价格	Radiation Hardened Fast Sample and Hold
HS-2420RH_03	INTERSIL	获取价格	Radiation Hardened Fast Sample and Hold
HS2421	ETC	获取价格	Peripheral IC
HS2422	ETC	获取价格	Peripheral IC
HS2423	ETC	获取价格	Peripheral IC
HS24230	MICROSEMI	获取价格	240 Amp Schottky Rectifier
HS24230_11	MICROSEMI	获取价格	240 Amp Schottky Rectifier
HS24230R	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 240A, 30V V(RRM), Silicon,
HS2424	ETC	获取价格	Peripheral IC
HS2425	ETC	获取价格	Peripheral IC

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