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HPLR3103 PDF预览

HPLR3103

更新时间: 2024-02-24 20:59:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
6页 75K
描述
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

HPLR3103 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.21Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):240 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):52 A
最大漏源导通电阻:0.019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):390 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HPLR3103 数据手册

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HPLR3103, HPLU3103  
Data Sheet  
July 1999  
File Number 4501.2  
52A, 30V, 0.019 Ohm, N-Channel Logic  
Level, Power MOSFETs  
Features  
• Logic Level Gate Drive  
• 52A, 30V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
converters, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. These types can be operated directly  
from integrated circuits.  
• Low On-Resistance, r  
= 0.019Ω  
DS(ON)  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Calculated continuous current based on maximum allowable junction  
temperature. Package limited to 20A continuous, see Figure 9.  
Symbol  
Ordering Information  
D
PART NUMBER  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
HP3103  
HP3103  
HPLU3103  
G
HPLR3103  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
DRAIN  
DRAIN  
(FLANGE)  
(FLANGE)  
GATE  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
6-3  

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