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HPCL-817-36L PDF预览

HPCL-817-36L

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
6页 191K
描述
Transistor Output Optocoupler, 1-Element, 5000V Isolation

HPCL-817-36L 数据手册

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Agilent HCPL-817  
Phototransistor Optocoupler  
High Density Mounting Type  
Data Sheet  
Features  
Current Transfer Ratio  
(CTR: min. 50% at I = 5 mA,  
F
V
CE  
= 5 V)  
High input-output isolation voltage  
(V = 5000 Vrms)  
Description  
Ordering Information  
Specify part number followed by  
Option Number (if desired).  
iso  
The HCPL-817 contains a light  
emitting diode optically coupled to  
a phototransistor. It is packaged in  
a 4-pin DIP package and available  
in wide-lead spacing option and  
lead bend SMD option. Input-output  
isolation voltage is 5000 Vrms.  
Response time, t , is typically 4 µs  
and minimum CTR is 50% at input  
current of 5 mA.  
Response time (t : typ., 4 µs at  
r
V
CE  
= 2 V, I = 2 mA, R = 100 )  
C L  
Compact dual-in-line package  
UL approved  
CSA approved  
IEC/EN/DIN EN 60747-5-2 approved  
Options available:  
– Leads with 0.4" (10.16 mm)  
spacing (W00)  
– Leads bends for surface  
mounting (300)  
– Tape and reel for SMD (500)  
– IEC/EN/DIN EN 60747-5-2  
approvals (060)  
HCPL-817-XXXX  
Option Number  
060 = IEC/EN/DIN EN 60747-5-2  
Option  
W00 = 0.4" Lead Spacing Option  
300 = Lead Bend SMD Option  
500 = Tape and Reel Packaging  
Option  
00A = Rank Mark A  
00B = Rank Mark B  
00C = Rank Mark C  
r
00D = Rank Mark D  
00L = Rank Mark L  
Functional Diagram  
Applications  
XXXE = Lead Free Option  
Signal transmission between  
circuits of different potentials and  
impedances  
PIN NO. AND INTERNAL  
CONNECTION DIAGRAM  
4
3
I/O interfaces for computers  
Feedback circuit in power supply  
Schematic  
I
I
C
1
+
F
4
3
ANODE  
COLLECTOR  
EMITTER  
V
F
1
2
2
CATHODE  
1. ANODE  
3. EMITTER  
2. CATHODE 4. COLLECTOR  
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to  
prevent damage and/or degradation which may be induced by ESD.  

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