Datasheet > HN4K03JU_07

HN4K03JU_07

更新时间： 2024-02-16 16:22:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	308K
描述
High Speed Switching Applications

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数据手册

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HN4K03JU_07 数据手册

HN4K03JU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN4K03JU

High Speed Switching Applications

Unit in mm

Analog Switch Applications

z High input impedance

z Low gate threshold voltage: V = 0.5~1.5V

z Excellent switching times

z Small package

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

Gate-Source voltage

DC Drain current

GSS

JEDEC

―

100

°C

EIAJ

Drain power dissipation

Channel temperature

Storage temperature range

P *

200

2-2L1B

TOSHIBA

Weight: 6.2mg

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

2007-11-01

12 3 4 5

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