Datasheet > HMS1M32Z8-17

HMS1M32Z8-17

更新时间： 2022-12-01 19:02:18

品牌	Logo	应用领域
HANBIT		静态存储器
页数	文件大小	规格书
9页	240K
描述
SRAM

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数据手册

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HMS1M32Z8-17 数据手册

HANBit

HMS1M32M8G/Z8

CAPACITANCE

DESCRIPTION

TEST CONDITIONS

V_I/O=0V

SYMBOL

C_I/O

MAX

UNIT

Input /Output Capacitance

Input Capacitance

V_IN=0V

C_IN

: Capacitance is sampled and not 100% tested

NOTE

AC CHARACTERISTICS ^{(0 C}

TEST CONDITIONS

70 C ; Vcc = 5V 0.5V, unless otherwise specified)

≤

PARAMETER

VALUE

0 to 3V

3ns

Input Pulse Level

Input Rise and Fall Time

Input and Output Timing Reference Levels

Output Load

1.5V

See below

Output Load (B)

Output Load (A)

V_L=1.5V

for t_HZ, t_LZ, t_WHZ, t_OW, t_OLZ

+5.0V

& t^OHZ

Ω

480

Ω

D_OUT

Z0=50

Ω

255

Ω

30pF

5pF*

READ CYCLE

-10

-12

-15

PARAMETER

SYMBOL

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

Read Cycle Time

t_RC

t_AA

t_CO

t_OE

t_LZ

Address Access Time

Chip Select to Output

Output Enable to Output

Chip Enable to Low-Z Output

Output Enable to Low-Z Output

Output Disable to High-Z Output

Chip Disable to High-Z Output

Output Hold from Address Change

Chip Select to Power Up Time

Chip Select to Power Down Time

t_OLZ

t_OHZ

t_HZ

t_OH

t_PU

t_PD

HANBit Electronics Co.,Ltd.

1 2 345 6 7...9

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