9 GHz to 10 GHz,
X-Band, GaAs, MMIC, Low Noise Converter
Data Sheet
HMC8108
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Conversion gain: 13 dB typical
Image rejection: 20 dBc typical
Noise figure: 2 dB typical
Input power for 1 dB compression: −4 dBm typical
Input third-order intercept: 6 dBm typical
Output saturated power: 10 dBm typical
LO leakage at the IF port: −20 dBm typical
LO leakage at the RF port: −37 dBm typical
32-terminal, 5 mm × 5 mm, ceramic leadless chip carrier (LCC)
NIC
NIC
1
2
3
4
5
6
7
8
24 NIC
23 BUFF_VD
22 NIC
LNA_VG1
NIC
21 NIC
RFIN
20 LOIN
19 NIC
APPLICATIONS
NIC
Point to point and point to multipoint radios
Military radar
Satellite communications
VCTRL
NIC
18 NIC
HMC8108
17 NIC
EPAD
Figure 1.
GENERAL DESCRIPTION
The HMC8108 is a compact, X-band, gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC) in-phase/
quadrature (I/Q), low noise converter in a ceramic, leadless chip
carrier, RoHS compliant package. The HMC8108 converts radio
frequency (RF) input signals ranging from 9 GHz to 10 GHz to a
typical single-ended intermediate frequency (IF) signal of 60 MHz
at its output. This device provides a small signal conversion gain
of 13 dB with a noise figure of 2 dB and image rejection of 20 dBc.
The HMC8108 uses a low noise amplifier followed by an image
reject mixer that is driven by an active LO buffer amplifier. The
image reject mixer eliminates the need for a filter following the
low noise amplifier and removes thermal noise at the image
frequency. I/Q mixer outputs are provided, and an external 90°
hybrid is needed to select the required sideband. The HMC8108
is a much smaller alternative to hybrid style, image reject mixer,
downconverter assemblies and is compatible with surface-mount
manufacturing techniques.
Rev. 0
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