Datasheet > HMC668LP3ERTR

HMC668LP3ERTR

更新时间： 2024-11-26 14:51:03

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
10页	349K
描述
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC

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HMC668LP3ERTR 数据手册

HMC668LP3 / 668LP3E

v01.0808

GaAs PHEMT MMIC LNA w/

FAILSAFE BYPASS MODE, 700 - 1200 MHz

Typical Applications

The HMC668LP3(E) is ideal for:

• Cellular/3G and LTE/WiMAX/4G

• BTS & Infrastructure

Features

Noise Figure: 0.9 dB

Output IP3: +33 dBm

Gain: 16 dB

• Repeaters and Femtocells

• Tower Mounted Ampliﬁers

• Test & Measurement Equipment

Failsafe Operation:

Bypass is enabled when LNA is unpowered

Single Supply: +3V or +5V

16 Lead 3x3mm QFN Package: 9 mm

Functional Diagram

General Description

The HMC668LP3(E) is a versatile, high dynamic range

GaAs MMIC Low Noise Ampliﬁer that integrates a low

loss LNA bypass mode on the IC. The ampliﬁer is ide-

al for receivers and LNA modules operating between

0.7 and 1.2 GHz and provides 0.9 dB noise ﬁgure,

16 dB of gain and +33 dBm IP3 from a single supply

of +5V @ 57mA. Input and output return losses are

excellent and no external matching components are

required. A single control line is used to switch be-

tween LNA mode and a low loss bypass mode. The

failsafe topology enables the LNA bypass path, when

no DC power is available.

Electrical Speciﬁcations, T_A= +25° C, Rbias = 0 Ohm

LNA Mode

Bypass Mode

Failsafe Mode

Parameter

Vdd = +3V

Vdd = +5V

Units

Min.

Typ.

0.7 - 1.2

Max. Min.

Typ.

0.7 - 1.2

Max. Min.

Typ.

0.7 - 1.2

-1.5

Max. Min.

Typ.

0.7 - 1.2

-1.5

Max.

Frequency Range

GHz

Gain

-2.5

Gain Variation Over Temperature

Noise Figure

0.03

0.85

0.016

0.9

0.0008

dB / °C

1.1

Input Return Loss

Output Return Loss

Reverse Isolation

Power for 1dB Compression

(P1dB)^[1]

dBm

Third Order Intercept (IP3)^[2]

dBm

Supply Current (Idd)

0.05

Switching Speed (90% -10%)

200

LNA Mode to Bypass Mode

Bypass Mode to LNA Mode

[1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN.

[2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 274

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与HMC668LP3ERTR相关器件

型号	品牌	获取价格	描述	数据表
HMC668LP3ETR	HITTITE	获取价格	Narrow Band Low Power Amplifier,
HMC668LP3ETR	ADI	获取价格	LNA with Failsafe Bypass Mode SMT, 700 - 1200 MHz
HMC668LP3RTR	ADI	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC
HMC668LP3TR	ADI	获取价格	LNA with Failsafe Bypass Mode SMT, 700 - 1200 MHz
HMC669LP3	HITTITE	获取价格	GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz
HMC669LP3E	HITTITE	获取价格	GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz
HMC669LP3ERTR	ADI	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC
HMC669LP3ETR	HITTITE	获取价格	暂无描述
HMC669LP3RTR	ADI	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC
HMC669LP3TR	HITTITE	获取价格	Narrow Band Low Power Amplifier,

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