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HMC668LP3ERTR

更新时间： 2024-02-23 08:35:17
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
10页 349K
描述
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC

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HMC668LP3ERTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.84
安装特点：SURFACE MOUNT功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：LCC16,.12SQ,20电源：3/5 V
子类别：RF/Microwave Amplifiers最大压摆率：70 mA
表面贴装：YES技术：GAAS
Base Number Matches：1

HMC668LP3ERTR 数据手册

 浏览型号HMC668LP3ERTR的Datasheet PDF文件第2页浏览型号HMC668LP3ERTR的Datasheet PDF文件第3页浏览型号HMC668LP3ERTR的Datasheet PDF文件第4页浏览型号HMC668LP3ERTR的Datasheet PDF文件第5页浏览型号HMC668LP3ERTR的Datasheet PDF文件第6页浏览型号HMC668LP3ERTR的Datasheet PDF文件第7页 
HMC668LP3 / 668LP3E  
v01.0808  
GaAs PHEMT MMIC LNA w/  
FAILSAFE BYPASS MODE, 700 - 1200 MHz  
5
Typical Applications  
The HMC668LP3(E) is ideal for:  
• Cellular/3G and LTE/WiMAX/4G  
• BTS & Infrastructure  
Features  
Noise Figure: 0.9 dB  
Output IP3: +33 dBm  
Gain: 16 dB  
• Repeaters and Femtocells  
• Tower Mounted Amplifiers  
• Test & Measurement Equipment  
Failsafe Operation:  
Bypass is enabled when LNA is unpowered  
Single Supply: +3V or +5V  
2
16 Lead 3x3mm QFN Package: 9 mm  
Functional Diagram  
General Description  
The HMC668LP3(E) is a versatile, high dynamic range  
GaAs MMIC Low Noise Amplifier that integrates a low  
loss LNA bypass mode on the IC. The amplifier is ide-  
al for receivers and LNA modules operating between  
0.7 and 1.2 GHz and provides 0.9 dB noise figure,  
16 dB of gain and +33 dBm IP3 from a single supply  
of +5V @ 57mA. Input and output return losses are  
excellent and no external matching components are  
required. A single control line is used to switch be-  
tween LNA mode and a low loss bypass mode. The  
failsafe topology enables the LNA bypass path, when  
no DC power is available.  
Electrical Specifications, TA = +25° C, Rbias = 0 Ohm  
LNA Mode  
Bypass Mode  
Failsafe Mode  
Parameter  
Vdd = +3V  
Vdd = +5V  
Units  
Min.  
12  
Typ.  
0.7 - 1.2  
15  
Max. Min.  
Typ.  
0.7 - 1.2  
16  
Max. Min.  
Typ.  
0.7 - 1.2  
-1.5  
Max. Min.  
Typ.  
0.7 - 1.2  
-1.5  
Max.  
Frequency Range  
GHz  
dB  
Gain  
13  
-2.5  
-2.5  
Gain Variation Over Temperature  
Noise Figure  
0.03  
0.85  
12  
0.016  
0.9  
0.0008  
0.0008  
dB / °C  
dB  
1.1  
1.1  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
13  
12  
13  
-
12  
13  
-
dB  
13  
14  
dB  
22  
23  
dB  
Power for 1dB Compression  
(P1dB)[1]  
13  
13  
22  
24  
dBm  
Third Order Intercept (IP3)[2]  
27  
32  
33  
57  
26  
26  
-
dBm  
mA  
Supply Current (Idd)  
40  
70  
0.05  
Switching Speed (90% -10%)  
200  
-
LNA Mode to Bypass Mode  
Bypass Mode to LNA Mode  
ns  
ns  
85  
85  
[1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN.  
[2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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HMC668LP3RTR ADI IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC

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