Datasheet > HMC606_09

HMC606_09

更新时间： 2022-11-07 17:13:34

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	317K
描述
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz

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HMC606_09 数据手册

HMC606

v02.0109

GaAs InGaP HBT MMIC ULTRA LOW

PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz

Typical Supply Current vs. Vcc1, Vcc2

Absolute Maximum Ratings

Vcc1= Vcc2 (V)

Icc1 + Icc2 (mA)

Vdd1= Vdd2= 5V

+4.5

+5.0

+5.5

RF Input Power (RFIN)

Channel Temperature

+15 dBm

175 °C

Continuous Pdiss (T = 85 °C)

(derate 14.6 mW/°C above 85 °C)

1.32 W

Thermal Resistance

(channel to die bottom)

68.37 °C/W

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

Outline Drawing

Die Packaging Information ^[1]

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

Standard

Alternate

GP-1 (Gel Pack)

[2]

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

7. BOND PAD METALIZATION: GOLD

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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