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HMC608LC4RTR PDF预览

HMC608LC4RTR

更新时间: 2024-01-23 06:54:00
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
6页 257K
描述
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,24PIN,CERAMIC

HMC608LC4RTR 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.72
安装特点:SURFACE MOUNT功能数量:1
端子数量:24最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:CERAMIC
封装等效代码:LCC24,.16SQ,20电源:5 V
子类别:RF/Microwave Amplifiers最大压摆率:350 mA
表面贴装:YES技术:GAAS
Base Number Matches:1

HMC608LC4RTR 数据手册

 浏览型号HMC608LC4RTR的Datasheet PDF文件第2页浏览型号HMC608LC4RTR的Datasheet PDF文件第3页浏览型号HMC608LC4RTR的Datasheet PDF文件第4页浏览型号HMC608LC4RTR的Datasheet PDF文件第5页浏览型号HMC608LC4RTR的Datasheet PDF文件第6页 
HMC608LC4  
v02.1208  
GaAs PHEMT MEDIUM  
POWER AMPLIFIER, 9.5 - 11.5 GHz  
Typical Applications  
Features  
The HMC608LC4 is ideal for:  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios  
• Military End-Use  
Output IP3: +33 dBm  
Saturated Power: +27.5 dBm @ 23% PAE  
Gain: 29.5 dB  
Supply: +5V @ 310 mA  
50 Ohm Matched Input/Output  
RoHS Compliant 4x4 mm SMT Package  
11  
Functional Diagram  
General Description  
The HMC608LC4 is a high dynamic range GaAs  
PHEMT MMIC Medium Power Amplifier housed in a  
leadless “Pb free” SMT package. The amplifier has  
two modes of operation: high gain mode (Vpd pin  
shorted to ground); and low gain mode (Vpd pin left  
open). The electrical specifications in the table below  
are shown for the amplifier operating in high gain  
mode. Operating from 9.5 to 11.5 GHz, the amplifier  
provides 29.5 dB of gain, +27.5 dBm of saturated  
power and 23% PAE from a +5V supply voltage.  
Noise figure is 6 dB while output IP3 is +33 dBm. The  
RF I/Os are DC blocked and matched to 50 Ohms  
for ease of use. The HMC608LC4 eliminates the  
need for wire bonding, allowing use of surface mount  
manufacturing techniques.  
Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2]  
Parameter  
Min.  
Typ.  
9.5 - 11.5  
29.5  
0.02  
13  
Max.  
Units  
GHz  
dB  
Frequency Range  
[3]  
Gain  
27  
Gain Variation Over Temperature  
Input Return Loss  
0.03  
dB/ °C  
dB  
Output Return Loss  
19  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
23  
27  
dBm  
dBm  
dBm  
dB  
27.5  
33  
Output Third Order Intercept (IP3)  
Noise Figure  
6.0  
[3]  
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.)  
310  
350  
mA  
[[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.  
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.  
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 314  

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