Datasheet > HMC566_09

HMC566_09

更新时间： 2024-02-17 12:30:50

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	241K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz

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HMC566_09 数据手册

HMC566

v00.0306

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 29 - 36 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Vdd (Vdc)

Idd (mA)

Drain Bias Voltage (Vdd1, 2, 3, 4)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

+3.5 Vdc

+5 dBm

175 °C

+2.5

+3.0

+3.5

Continuous Pdiss (T= 85 °C)

(derate 9.6 mW/°C above 85 °C)

0.82 W

Note: Ampliﬁer will operate over full voltage ranges shown

above.

Thermal Resistance

(channel to die bottom)

104.2 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

Die Packaging Information ^[1]

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

Standard

Alternate

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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